scholarly journals Defect formation and diffusion mechanism in ion-assisted molecular-beam epitaxy

1992 ◽  
Vol 46 (11) ◽  
pp. 7103-7109 ◽  
Author(s):  
C. J. Tsai ◽  
T. Vreeland ◽  
H. A. Atwater
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Diffusion Mechanism ◽  
And Diffusion

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

1992 ◽  
Vol 61 (10) ◽  
pp. 1196-1198 ◽  
Author(s):  
S. H. Shin ◽  
J. M. Arias ◽  
M. Zandian ◽  
J. G. Pasko ◽  
J. Bajaj ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
And Diffusion

Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy

2006 ◽  
Vol 88 (10) ◽  
pp. 101904 ◽  
Author(s):  
D. Dagnelund ◽  
I. A. Buyanova ◽  
T. Mchedlidze ◽  
W. M. Chen ◽  
A. Utsumi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Ion Bombardment ◽  
Luminescence Efficiency ◽  
Nitrogen Ion

Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

1994 ◽  
Vol 141 (1-2) ◽  
pp. 109-118 ◽  
Author(s):  
V.I. Vdovin ◽  
M.G. Mil'vidskii ◽  
T.G. Yugova ◽  
K.L. Lyutovich ◽  
S.M. Saidov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Alloy Composition

The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

2005 ◽  
Vol 39 (5) ◽  
pp. 557-564 ◽  
Author(s):  
G. E. Cirlin ◽  
V. G. Dubrovskii ◽  
N. V. Sibirev ◽  
I. P. Soshnikov ◽  
Yu. B. Samsonenko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diffusion Mechanism

Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

2021 ◽  
Vol 130 (23) ◽  
pp. 235301
Author(s):  
Akhil Mauze ◽  
Yuewei Zhang ◽  
Takeki Itoh ◽  
Thomas E. Mates ◽  
Hartwin Peelaers ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mg Doping ◽  
And Diffusion

Studies of Mg-GaN grown by MBE on GaAs(111)B substrates

1997 ◽  
Vol 2 ◽  
Author(s):  
T. S. Cheng ◽  
C. T. Foxon ◽  
N. J. Jeffs ◽  
D. J. Dewsnip ◽  
L. Flannery ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Molecular Beam ◽  
Diffusion Mechanism ◽  
Surface Concentration ◽  
Chemical Concentration ◽  
Doping Density ◽  
Surface Population ◽  
Rapid Diffusion ◽  
Mg Doped

This paper discusses the growth of Mg-doped GaN samples using a modified Molecular Beam Epitaxy (MBE) method. Our results suggest that the dopant is incorporated from a surface population maintained by the incident Mg flux by a rapid diffusion mechanism. It follows that the chemical concentration will increase with time of growth and that the p-doping level will also increase progressively with film thickness for a given Mg flux. Increasing the Mg flux to the surface results at first in a higher doping density, but this saturates when the Mg surface concentration reaches a finite value.

Sign in / Sign up

Export Citation Format

Share Document