Epitaxial Crystallisation of Doped Amorphous Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
R.G. Elliman ◽  
S.T. Johnson ◽  
K.T. Short ◽  
J.S. Williams
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Epitaxial Regrowth ◽  
Ion Implanted

ABSTRACTThis paper outlines a model to account for the influence of doping and electronic processes on the solid phase epitaxial regrowth rate of ion implanted (100) silicon. In addition we present data which illustrates good quality epitaxial crystallisation of silicon at 400°C induced by He+ ion irradiation. We tentatively suggest that electronic energy-loss processes may be responsible for this behaviour.

Solid phase epitaxial regrowth of buried amorphous silicon layers obtained by ion irradiation

1994 ◽  
Vol 88 (3) ◽  
pp. 255-260 ◽  
Author(s):  
A.V. Buravlyov ◽  
L.Y. Krasnobaev ◽  
A.A. Malinin ◽  
V.V. Kireiko ◽  
V.V. Starkov ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Epitaxial Regrowth

Evidence for Electronic Energy Loss Processes Stimulating Solid Phase Epitaxial Regrowth of Spatially Isolated Amorphous Regions in Semiconductor Systems

1994 ◽  
Vol 373 ◽  
Author(s):  
I. Jencic ◽  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Electron Energy ◽  
Solid Phase ◽  
Electronic Energy ◽  
Experimental Results ◽  
Dangling Bonds ◽  
Epitaxial Regrowth ◽  
Charged Defects ◽  
Threshold Displacement

AbstractSolid phase epitaxial regrowth of spatially isolated amorphous regions in Si, Ge and GaP has been stimulated by using an electron beam with energies in the range of 50 to 300 keV. In all materials, the rate at which the amorphous zones disappear decreases as the energy of the electron beam increases from 50 keV reaching a minimum below the threshold displacement voltage before it again increases with increasing electron energy. The experimental results are interpreted in terms of creation and motion of defects (dangling bonds, charged defects) along the amorphouscrystalline interface.

scholarly journals A coupled effect of nuclear and electronic energy loss on ion irradiation damage in lithium niobate

2016 ◽  
Vol 105 ◽  
pp. 429-437 ◽  
Author(s):  
P. Liu ◽  
Y. Zhang ◽  
H. Xue ◽  
K. Jin ◽  
M.L. Crespillo ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Energy Loss ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Irradiation Damage ◽  
Coupled Effect

Non-Planar Solid Phase Epitaxial Growth Processes in Ion-Implanted GaAs

1981 ◽  
Vol 10 ◽  
Author(s):  
J. S. Williams ◽  
F. M. Adams ◽  
K. G. Rossiter
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Surface Crystallization ◽  
Growth Interface ◽  
Near Surface ◽  
Epitaxial Regrowth ◽  
Reflection Electron Diffraction ◽  
Ion Implanted

High resolution ion channelling and reflection electron diffraction techniques have been used to examine details of epitaxial regrowth in Ar+-ion-implanted GaAs(100) at furnace anneal temperatures of 400°C or less. In particular, we have investigated the nature and extent of epitaxial regrowth during both isothermal and isochronal annealing for various implant energies and for implant doses above and below the amorphous threshold. Our results indicate the development of a nonplanar growth interface during annealing which may lead, ultimately, to complex near-surface crystallization processes. Consistently with our observations and recent results from other laboratories, we propose a model for the epitaxial regrowth of amorphous GaAs layers based upon non-uniform growth rates along the amorphous-crystalline interface which could arise from local stoichiometry imbalance.

Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon

2015 ◽  
Vol 8 (2) ◽  
pp. 021302
Author(s):  
Kuan-Kan Hu ◽  
Shin-Yang Liang ◽  
Wei Yen Woon
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Ion Implanted

Epitaxial Crystallization of Amorphous Silicon Layers under Ion Irradiation: Orientation Dependence

1987 ◽  
Vol 93 ◽  
Author(s):  
D. M. Maher ◽  
R. G. Elliman ◽  
J. Linnros ◽  
J. S. Williams ◽  
R. V. Knoell ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Orientation Dependence ◽  
Epitaxial Crystallization ◽  
Beam Experiment ◽  
Interfacial Defects ◽  
Behavior Supports ◽  
Orientation Dependency

ABSTRACTIon-beam induced epitaxial crystallization of thin amorphous silicon layers at {100} and {110} crystalline/amorphous interfaces exhibits no orientation dependencies, whereas at a {111} crystalline/amorphous interface a weak orientation dependency relative to thermal-induced epitaxial crystallization is observed. This behavior supports an interpretation in which the thermal crystallization process is dominated by the need to form interfacial defects and/or growth sites and in the ion-beam experiment this formation process ocurrs athermally. It is thought that the observed orientation dependent regrowth on a {111} substrate relative to a {100} (or {110}) substrate is associated with the special correlated atomic sequencing which is believed to control solid-phase epitaxial crystallization at a {111) crystalline/amorphous interface.

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