Direct display of the valence‐band dispersion in ultraviolet photoemission spectroscopy: Application to GaSe

1988 ◽  
Vol 59 (6) ◽  
pp. 859-861 ◽  
Author(s):  
G. Lévêque
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Dispersion ◽  
Ultraviolet Photoemission Spectroscopy

Valence band ultraviolet photoemission spectroscopy of Dy/W(100)

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 429-433 ◽  
Author(s):  
N Moslemzadeh ◽  
S.D Barrett ◽  
V.R Dhanak ◽  
G Miller
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoemission Spectroscopy

Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP: A valence-band contribution

1991 ◽  
Vol 43 (18) ◽  
pp. 14581-14588 ◽  
Author(s):  
F. Proix ◽  
C. A. Sébenne ◽  
B. El Hafsi ◽  
K. Hricovini ◽  
R. Pinchaux ◽  
...  
Keyword(s):  
Valence Band ◽  
Atomic Hydrogen ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
Ultraviolet Photoemission Spectroscopy

scholarly journals Valence band dispersion measurements of perovskite single crystals using angle-resolved photoemission spectroscopy

2017 ◽  
Vol 19 (7) ◽  
pp. 5361-5365 ◽  
Author(s):  
Congcong Wang ◽  
Benjamin R. Ecker ◽  
Haotong Wei ◽  
Jinsong Huang ◽  
Jian-Qiao Meng ◽  
...  
Keyword(s):  
Band Structure ◽  
Single Crystals ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Band Dispersion

The ARPES study of perovskite single crystals revealed the band structure along theΓXandΓMdirections.

A Photoemission Study of the Epitaxial Growth of Si on Gap(110)

1987 ◽  
Vol 94 ◽  
Author(s):  
David W. Niles ◽  
Ming Tang ◽  
Hartmut Höchst
Keyword(s):  
Fermi Level ◽  
Epitaxial Growth ◽  
Valence Band ◽  
Surface State ◽  
Photoemission Spectroscopy ◽  
Fermi Level Position ◽  
Ultraviolet Photoemission Spectroscopy ◽  
Photoemission Study ◽  
Valence Band Discontinuity

ABSTRACTWe have used angular resolved ultraviolet photoemission spectroscopy to study the epitaxial growth of Si on GaP(110). Surface state emission obscures the top of the valence band (TVB). The Fermi level for the clean GaP(110) surface is 1.20±0.05eV above the TVB. 1ML (monolayer) of Si pins the Fermi level position at 1.40±0.05eV above the TVB. Further deposition of Si leads to a valence band discontinuity ΔEv=1.07 ±0.10eV.

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