scholarly journals Comment on amplitude modulations in the ultraviolet-photoemission-spectroscopy valence-band spectra of Au and Ag

1981 ◽  
Vol 23 (8) ◽  
pp. 4276-4278 ◽  
Author(s):  
J. Barth
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoemission Spectroscopy ◽  
Band Spectra

Valence band ultraviolet photoemission spectroscopy of Dy/W(100)

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 429-433 ◽  
Author(s):  
N Moslemzadeh ◽  
S.D Barrett ◽  
V.R Dhanak ◽  
G Miller
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoemission Spectroscopy

Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP: A valence-band contribution

1991 ◽  
Vol 43 (18) ◽  
pp. 14581-14588 ◽  
Author(s):  
F. Proix ◽  
C. A. Sébenne ◽  
B. El Hafsi ◽  
K. Hricovini ◽  
R. Pinchaux ◽  
...  
Keyword(s):  
Valence Band ◽  
Atomic Hydrogen ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
Ultraviolet Photoemission Spectroscopy

A Photoemission Study of the Epitaxial Growth of Si on Gap(110)

1987 ◽  
Vol 94 ◽  
Author(s):  
David W. Niles ◽  
Ming Tang ◽  
Hartmut Höchst
Keyword(s):  
Fermi Level ◽  
Epitaxial Growth ◽  
Valence Band ◽  
Surface State ◽  
Photoemission Spectroscopy ◽  
Fermi Level Position ◽  
Ultraviolet Photoemission Spectroscopy ◽  
Photoemission Study ◽  
Valence Band Discontinuity

ABSTRACTWe have used angular resolved ultraviolet photoemission spectroscopy to study the epitaxial growth of Si on GaP(110). Surface state emission obscures the top of the valence band (TVB). The Fermi level for the clean GaP(110) surface is 1.20±0.05eV above the TVB. 1ML (monolayer) of Si pins the Fermi level position at 1.40±0.05eV above the TVB. Further deposition of Si leads to a valence band discontinuity ΔEv=1.07 ±0.10eV.

HIGH SPATIAL RESOLUTION SOFT X-RAY PHOTOEMISSION STUDY OF WO3 THIN FILMS

2002 ◽  
Vol 09 (01) ◽  
pp. 375-380 ◽  
Author(s):  
L. LOZZI ◽  
M. PASSACANTANDO ◽  
S. SANTUCCI ◽  
S. LA ROSA ◽  
N. YU. SVETCHNIKOV
Keyword(s):  
Valence Band ◽  
Film Surface ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Thin Film Surface ◽  
High Lateral Resolution ◽  
Band Spectra ◽  
Photoemission Study ◽  
First Time ◽  
Wo3 Thin Films

WO 3 thin film surface chemical composition has been studied by means of high resolution soft X-ray photoemission spectroscopy. Valence band and W 4f core levels have been analyzed on different sample positions and high lateral resolution images have been acquired. The valence band spectra have shown for the first time a marked increase of the W 5d density of state at the Fermi level, indicating the presence of metallic tungsten on the surface. This has been confirmed by the W 4f signal, which presents both metallic and oxidized phases. For the first time, spectromicroscopy on core states has clearly evidenced the presence of nonstoichiometric areas and a spatial localization of W 4+ states on the surface.

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