Deep center inAl0.3Ga0.7As

1991 ◽  
Vol 43 (14) ◽  
pp. 12126-12129 ◽  
Author(s):  
W. P. Roach ◽  
Meera Chandrasekhar ◽  
H. R. Chandrasekhar ◽  
F. A. Chambers
Keyword(s):  
2010 ◽  
Vol 96 (15) ◽  
pp. 151902 ◽  
Author(s):  
A. Sedhain ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  

2008 ◽  
Vol 77 (7) ◽  
Author(s):  
F. T. Vasko ◽  
A. Hernandez-Cabrera ◽  
P. Aceituno

1983 ◽  
Vol 26 (10) ◽  
pp. 889-898
Author(s):  
Yu. B. Bolkhovityanov ◽  
A. F. Kravchenko ◽  
S. I. Chikichev

1998 ◽  
Vol 84 (6) ◽  
pp. 3167-3174 ◽  
Author(s):  
Hiroyuki Shiraki ◽  
Yutaka Tokuda ◽  
Koichi Sassa

2001 ◽  
Vol 16 (5) ◽  
pp. 1245-1248 ◽  
Author(s):  
J. A. Garcia ◽  
V. Muñoz ◽  
C. Martinez-Tomas ◽  
J. J. S. Garitaonandia

A close relationship between the photoluminescence emissions labeled Y and S, related to dislocations and extended structural defects, and the preparation of the surface state of ZnSe single crystals before PL (photoluminescence) measurements has been established. The samples were obtained by solid-phase recrystallization under different pressure conditions. An easy method for achieving good quality surfaces with a very significant reduction of such Y and S PL emissions is proposed.


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