Deep center luminescence versus surface preparation of ZnSe single crystals

2001 ◽  
Vol 16 (5) ◽  
pp. 1245-1248 ◽  
Author(s):  
J. A. Garcia ◽  
V. Muñoz ◽  
C. Martinez-Tomas ◽  
J. J. S. Garitaonandia
Keyword(s):  
Single Crystals ◽  
Surface State ◽  
Solid Phase ◽  
Surface Preparation ◽  
Deep Center ◽  
Structural Defects ◽  
Easy Method ◽  
Phase Recrystallization ◽  
Close Relationship

A close relationship between the photoluminescence emissions labeled Y and S, related to dislocations and extended structural defects, and the preparation of the surface state of ZnSe single crystals before PL (photoluminescence) measurements has been established. The samples were obtained by solid-phase recrystallization under different pressure conditions. An easy method for achieving good quality surfaces with a very significant reduction of such Y and S PL emissions is proposed.

Structural and optical characterization of ZnSe single crystals grown by solid‐phase recrystallization

1996 ◽  
Vol 80 (5) ◽  
pp. 2983-2989 ◽  
Author(s):  
E. Tournié ◽  
C. Morhain ◽  
G. Neu ◽  
M. Laügt ◽  
C. Ongaretto ◽  
...  
Keyword(s):  
Single Crystals ◽  
Solid Phase ◽  
Optical Characterization ◽  
Phase Recrystallization

Photoluminescence study of ZnSe single crystals grown by solid‐phase recrystallization

1996 ◽  
Vol 68 (10) ◽  
pp. 1356-1358 ◽  
Author(s):  
E. Tournié ◽  
C. Morhain ◽  
G. Neu ◽  
J.‐P. Faurie ◽  
R. Triboulet ◽  
...  
Keyword(s):  
Single Crystals ◽  
Solid Phase ◽  
Photoluminescence Study ◽  
Phase Recrystallization

Growth of high optical quality zinc chalcogenides single crystals by solid phase recrystallization technique at barothermal treatment

2017 ◽  
Vol 457 ◽  
pp. 275-281 ◽  
Author(s):  
Eugeni Gavrishuk ◽  
Vladimir Ikonnikov ◽  
Tatyana Kotereva ◽  
Vladimir Pimenov ◽  
Dmitry Savin ◽  
...  
Keyword(s):  
Single Crystals ◽  
Solid Phase ◽  
Optical Quality ◽  
High Optical Quality ◽  
Phase Recrystallization ◽  
Barothermal Treatment

ВЛИЯНИЕ ТВЕРДОФАЗНОЙ РЕКРИСТАЛЛИЗАЦИИ С ДВОЙНОЙ ИМПЛАНТАЦИЕЙ НА ПЛОТНОСТЬ СТРУКТУРНЫХ ДЕФЕКТОВ В УЛЬТРАТОНКИХ СЛОЯХ КРЕМНИЯ НА САПФИРЕ

2020 ◽  
Vol 96 (3s) ◽  
pp. 154-159
Author(s):  
Н.Н. Егоров ◽  
С.А. Голубков ◽  
С.Д. Федотов ◽  
В.Н. Стаценко ◽  
А.А. Романов ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Solid Phase ◽  
Modern Method ◽  
Structural Defects ◽  
Structural Quality ◽  
Mos Transistors ◽  
Ultrathin Layers ◽  
Heteroepitaxial Layers ◽  
Xrd And Tem

Высокая плотность структурных дефектов является основной проблемой при изготовлении электроники на гетероструктурах «кремний на сапфире» (КНС). Современный метод получения ультратонких структур КНС с помощью твердофазной эпитаксиальной рекристаллизации позволяет значительно снизить дефектность в гетероэпитаксиальном слое КНС. В данной работе ультратонкие (100 нм) слои КНС были получены путем рекристаллизации и утонения субмикронных (300 нм) слоев кремния на сапфире, обладающих различным структурным качеством. Плотность структурных дефектов в слоях КНС оценивалась с помощью рентгеноструктурного анализа и просвечивающей электронной микроскопии. Кривые качания от дифракционного отражения Si(400), полученные в ω-геометрии, продемонстрировали максимальную ширину на полувысоте пика не более 0,19-0,20° для ультратонких слоев КНС толщиной 100 нм. Формирование структурно совершенного субмикронного слоя КНС 300 нм на этапе газофазной эпитаксии обеспечивает существенное уменьшение плотности дислокаций в ультратонком кремнии на сапфире до значений ~1 • 104 см-1. Тестовые n-канальные МОП-транзисторы на ультратонких структурах КНС характеризовались подвижностью носителей в канале 725 см2 Вс-1. The high density of structural defects is the main problem on the way to the production of electronics on silicon-on-sapphire (SOS) heteroepitaxial wafers. The modern method of obtaining ultrathin SOS wafers is solid-phase epitaxial recrystallization which can significantly reduce the density of defects in the SOS heteroepitaxial layers. In the current work, ultrathin (100 nm) SOS layers were obtained by recrystallization and thinning of submicron (300 nm) SOS layers, which have various structural quality. The density of structural defects in the layers was estimated by using XRD and TEM. Full width at half maximum of rocking curves (ω-geometry) was no more than 0.19-0.20° for 100 nm ultra-thin SOS layers. The structural quality of 300 nm submicron SOS layers, which were obtained by CVD, depends on dislocation density in 100 nm ultrathin layers. The dislocation density in ultrathin SOS layers was reduced by ~1 • 104 cm-1 due to the utilization of the submicron SOS with good crystal quality. Test n-channel MOS transistors based on ultra-thin SOS wafers were characterized by electron mobility in the channel 725 cm2 V-1 s-1.

Identification of a Coronavirus Hemagglutinin-Esterase with a Substrate Specificity Different from Those of Influenza C Virus and Bovine Coronavirus

1999 ◽  
Vol 73 (5) ◽  
pp. 3737-3743 ◽  
Author(s):  
Alfred Klausegger ◽  
Birgit Strobl ◽  
Gerhard Regl ◽  
Alexandra Kaser ◽  
Willem Luytjes ◽  
...  
Keyword(s):  
Substrate Specificity ◽  
Solid Phase ◽  
Hepatitis Virus ◽  
Bovine Brain ◽  
Brain Extract ◽  
Binding Assays ◽  
Bovine Coronavirus ◽  
Close Relationship ◽  
Influenza C Virus ◽  
Cloned Gene

ABSTRACT We have characterized the hemagglutinin-esterase (HE) of puffinosis virus (PV), a coronavirus closely related to mouse hepatitis virus (MHV). Analysis of the cloned gene revealed approximately 85% sequence identity to HE proteins of MHV and approximately 60% identity to the corresponding esterase of bovine coronavirus. The HE protein exhibited acetylesterase activity with synthetic substratesp-nitrophenyl acetate, α-naphthyl acetate, and 4-methylumbelliferyl acetate. In contrast to other viral esterases, no activity was detectable with natural substrates containing 9-O-acetylated sialic acids. Furthermore, PV esterase was unable to remove influenza C virus receptors from human erythrocytes, indicating a substrate specificity different from HEs of influenza C virus and bovine coronavirus. Solid-phase binding assays revealed that purified PV was unable to bind to sialic acid-containing glycoconjugates like bovine submaxillary mucin, mouse α1macroglobulin or bovine brain extract. Because of the close relationship to MHV, possible implications on the substrate specificity of MHV esterases are suggested.

Some structural defects in YAlO3:Nd single crystals

1974 ◽  
Vol 21 (1) ◽  
pp. K35-K38 ◽  
Author(s):  
P. A. Arsenev ◽  
S. A. Vakhidov ◽  
E. M. Ibragimova
Keyword(s):  
Single Crystals ◽  
Structural Defects
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