Deep‐center oxygen‐related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy

1995 ◽  
Vol 78 (3) ◽  
pp. 2015-2021 ◽  
Author(s):  
P. W. Yu ◽  
Y. Park ◽  
M. Skowronski ◽  
Michael L. Timmons
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Center ◽  
Organometallic Vapor Phase Epitaxy

Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

1995 ◽  
Vol 67 (12) ◽  
pp. 1721-1723 ◽  
Author(s):  
W. I. Lee ◽  
T. C. Huang ◽  
J. D. Guo ◽  
M. S. Feng
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organometallic Vapor Phase Epitaxy

Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation

2013 ◽  
Vol 52 (11R) ◽  
pp. 110201 ◽  
Author(s):  
Alexander Vodopyanov ◽  
Yurii Buzynin ◽  
Dmitry Mansfeld ◽  
Oleg Khrykin ◽  
Yurii Drozdov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Nitrogen Plasma ◽  
Vapor Phase Epitaxy ◽  
High Rate ◽  
Organometallic Vapor Phase Epitaxy ◽  
Plasma Activation

3-μ InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

1992 ◽  
Author(s):  
Raymond J. Menna ◽  
David R. Capewell ◽  
Ramon U. Martinelli ◽  
Pamela K. York ◽  
Ronald E. Enstrom
Keyword(s):  
Vapor Phase ◽  
Diode Lasers ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
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