Correction: Pan, J.L. Progress to a Gallium-Arsenide Deep-Center Laser. Materials 2009, 2, 1599-1635

Janet Pan

doi:10.3390/ma2041795

Correction: Pan, J.L. Progress to a Gallium-Arsenide Deep-Center Laser. Materials 2009, 2, 1599-1635

Materials ◽

10.3390/ma2041795 ◽

2009 ◽

Vol 2 (4) ◽

pp. 1795-1795

Author(s):

Janet Pan

Keyword(s):

Gallium Arsenide ◽

Deep Center ◽

Laser Materials

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Nonequilibrium deep-center trapping in liquid epitaxy on gallium arsenide

Soviet Physics Journal ◽

10.1007/bf00896643 ◽

1983 ◽

Vol 26 (10) ◽

pp. 889-898

Author(s):

Yu. B. Bolkhovityanov ◽

A. F. Kravchenko ◽

S. I. Chikichev

Keyword(s):

Gallium Arsenide ◽

Deep Center ◽

Liquid Epitaxy

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Gallium-arsenide deep-center laser

Applied Physics B ◽

10.1007/s00340-009-3618-5 ◽

2009 ◽

Vol 96 (4) ◽

pp. 719-725 ◽

Cited By ~ 1

Author(s):

M. Gupta ◽

J. L. Pan

Keyword(s):

Gallium Arsenide ◽

Deep Center

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Progress to a Gallium-Arsenide Deep-Center Laser

Materials ◽

10.3390/ma2041599 ◽

2009 ◽

Vol 2 (4) ◽

pp. 1599-1635 ◽

Cited By ~ 4

Author(s):

Janet Pan

Keyword(s):

Gallium Arsenide ◽

Deep Center

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Letter Spectroscopic analogy approach in selective search for new Ce 3+ -activated all-solid-state tunable ultraviolet laser materials

Journal of Modern Optics ◽

10.1080/095003498151915 ◽

1998 ◽

Vol 45 (2) ◽

pp. 221-226 ◽

Cited By ~ 6

Author(s):

M. A. DUBINSKII, K. L. SCHEPLER V. V.

Keyword(s):

Solid State ◽

Laser Materials ◽

Ultraviolet Laser ◽

Selective Search

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Structural/Property Relationships for Optical Materials

MRS Proceedings ◽

10.1557/proc-329-215 ◽

1993 ◽

Vol 329 ◽

Author(s):

Vivien D.

Keyword(s):

Crystal Structure ◽

Optical Properties ◽

Electronic Structure ◽

Chemical Composition ◽

Field Strength ◽

Optical Materials ◽

Site Occupancy ◽

Laser Materials ◽

Crystal Field Strength ◽

The Matrix

AbstractIn this paper the relationships between the crystal structure, chemical composition and electronic structure of laser materials, and their optical properties are discussed. A brief description is given of the different laser activators and of the influence of the matrix on laser characteristics in terms of crystal field strength, symmetry, covalency and phonon frequencies. The last part of the paper lays emphasis on the means to optimize the matrix-activator properties such as control of the oxidation state and site occupancy of the activator and influence of its concentration.

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