Thermal-equilibrium processes in undoped amorphous-silicon alloys

1987 ◽  
Vol 36 (17) ◽  
pp. 9348-9350 ◽  
Author(s):  
S. C. Agarwal ◽  
J. S. Payson ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Thermal Equilibrium ◽  
Silicon Alloys ◽  
Equilibrium Processes

Thermal-equilibrium processes in amorphous silicon

1987 ◽  
Vol 35 (3) ◽  
pp. 1316-1333 ◽  
Author(s):  
R. Street ◽  
J. Kakalios ◽  
C. Tsai ◽  
T. Hayes
Keyword(s):  
Amorphous Silicon ◽  
Thermal Equilibrium ◽  
Equilibrium Processes

Dynamics of the creation of light-induced defects in amorphous silicon alloys

1986 ◽  
Vol 33 (4) ◽  
pp. 2512-2519 ◽  
Author(s):  
M. Hack ◽  
S. Guha ◽  
W. den Boer
Keyword(s):  
Amorphous Silicon ◽  
Silicon Alloys ◽  
The Creation ◽  
Induced Defects

Vibrational properties of amorphous silicon alloys

1981 ◽  
Vol 23 (10) ◽  
pp. 5263-5268 ◽  
Author(s):  
W. B. Pollard ◽  
J. D. Joannopoulos
Keyword(s):  
Amorphous Silicon ◽  
Vibrational Properties ◽  
Silicon Alloys

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

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