Thermal-equilibrium processes in amorphous silicon

1987 ◽  
Vol 35 (3) ◽  
pp. 1316-1333 ◽  
Author(s):  
R. Street ◽  
J. Kakalios ◽  
C. Tsai ◽  
T. Hayes
Keyword(s):  
Amorphous Silicon ◽  
Thermal Equilibrium ◽  
Equilibrium Processes

Thermal-equilibrium processes in undoped amorphous-silicon alloys

1987 ◽  
Vol 36 (17) ◽  
pp. 9348-9350 ◽  
Author(s):  
S. C. Agarwal ◽  
J. S. Payson ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Thermal Equilibrium ◽  
Silicon Alloys ◽  
Equilibrium Processes

Annealing of Defects During the Deposition of Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
N. Hata ◽  
P. Roca i Cabarrocas ◽  
N. Wyrsch ◽  
S. Wagner ◽  
M. Favre
Keyword(s):  
Amorphous Silicon ◽  
Thermal Equilibrium ◽  
Surface Defects ◽  
Defect Density ◽  
Deep Level ◽  
Deep Level Defect ◽  
Defect Profile ◽  
Average Defect ◽  
Hydrogenated Amorphous ◽  
Growth Temperature Dependence

ABSTRACTThe thickness dependence of the sub-gap optical absorption in plasma-deposited hydrogenated amorphous silicon is carefully studied by photo-thermal deflection spectroscopy. The deep-level defect concentration decays from the top surface into the bulk where it approaches the thermal equilibrium defect density. This defect profile is interpreted in terms of the annealing, during growth, of growth-induced surface defects. It is also shown that the defect profile is compatible with the known growth-temperature dependence of the average defect density in amorphous silicon.

scholarly journals Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen

1990 ◽  
Vol 41 (14) ◽  
pp. 10049-10057 ◽  
Author(s):  
Xixiang Xu ◽  
Hiroyuki Sasaki ◽  
Akiharu Morimoto ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Thermal Equilibrium ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Carbon ◽  
Equilibrium Defects ◽  
Hydrogenated Amorphous ◽  
Silicon Silicon
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