High-Field Transport in the Three-Valley Conduction Band of Gallium Antimonide

1971 ◽  
Vol 3 (2) ◽  
pp. 420-426 ◽  
Author(s):  
W. Jantsch ◽  
H. Heinrich
Keyword(s):  
Conduction Band ◽  
High Field ◽  
Gallium Antimonide

3-level conduction-band structure of GaAs from high-stress and high-field measurements

1977 ◽  
Vol 13 (2) ◽  
pp. 46 ◽  
Author(s):  
A.R. Adams ◽  
P.J. Vinson ◽  
C. Pickering ◽  
G.D. Pitt ◽  
W. Fawcett
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
High Field ◽  
High Stress ◽  
Field Measurements

The Specific Features of High-Field Transport in SiC Polytypes

2008 ◽  
Vol 600-603 ◽  
pp. 513-516 ◽  
Author(s):  
Vladimir Ilich Sankin ◽  
Pavel P. Shkrebiy ◽  
Alla A. Lepneva ◽  
M.S. Ramm
Keyword(s):  
Silicon Carbide ◽  
Electric Field ◽  
Conduction Band ◽  
High Field ◽  
Impact Ionization ◽  
Quantum Mechanical ◽  
Bloch Oscillations ◽  
Parallel Field ◽  
Natural Superlattice

A natural superlattice (NSL) in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads to a number of effects in phenomena of quantum-mechanical transport and impact ionization when the electric field directed along an axis of NSL (axis C in crystal). These processes are absolutely traditional when the electric field is perpendicularly to this axis. The parallel field phenomena are explained by the effects of the Wannier–Stark localization (WSL) among them the Bloch oscillations effect is most prominent today.

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