Gallium antimonide (GaSb), conduction band splitting by strain

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_235 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Conduction Band ◽

Gallium Antimonide ◽

Band Splitting

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Gallium antimonide (GaSb), data for the L and X conduction band minima

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_236 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Conduction Band ◽

Gallium Antimonide

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High-Field Transport in the Three-Valley Conduction Band of Gallium Antimonide

Physical Review B ◽

10.1103/physrevb.3.420 ◽

1971 ◽

Vol 3 (2) ◽

pp. 420-426 ◽

Cited By ~ 11

Author(s):

W. Jantsch ◽

H. Heinrich

Keyword(s):

Conduction Band ◽

High Field ◽

Gallium Antimonide

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Positive Magnetoresistance Due to Conduction-Band Splitting in the Eu — Chalcogenides

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_153 ◽

1974 ◽

pp. 894-898

Author(s):

Y. Shapira ◽

R. L. Kautz ◽

T. B. Reed

Keyword(s):

Conduction Band ◽

Positive Magnetoresistance ◽

Band Splitting ◽

The Eu

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Dipole-correlated carrier transportation and orbital reconfiguration in strain-distorted SrNbxTi1−xO3/KTaO3

Physical Chemistry Chemical Physics ◽

10.1039/c7cp06495k ◽

2017 ◽

Vol 19 (44) ◽

pp. 29913-29917 ◽

Cited By ~ 1

Author(s):

Jikun Chen ◽

Xinyou Ke ◽

Jiaou Wang ◽

Takeaki Yajima ◽

Haijie Qian ◽

...

Keyword(s):

Conduction Band ◽

Band Splitting ◽

Carrier Transportation

A distinct transportation characteristic of conduction band splitting is achieved by coupling the carriers with randomly distributed lattice-dipoles for strain-distorted SrNbxTi1−xO3/KTaO3.

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High Electric Field Effects and Electron Transfer to Higher Conduction Band Minima in Gallium Antimonide

physica status solidi (b) ◽

10.1002/pssb.19700380121 ◽

1970 ◽

Vol 38 (1) ◽

pp. 225-228 ◽

Cited By ~ 8

Author(s):

H. Heinrich ◽

W. Jantsch

Keyword(s):

Electron Transfer ◽

Electric Field ◽

Conduction Band ◽

Gallium Antimonide ◽

High Electric Field ◽

Electric Field Effects ◽

Field Effects

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Magnetoresistance due to conduction band splitting in magnetic semiconductors

10.1063/1.29930 ◽

1975 ◽

Cited By ~ 1

Author(s):

R. L. Kautz ◽

Y. Shapira

Keyword(s):

Conduction Band ◽

Magnetic Semiconductors ◽

Band Splitting

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Positive magnetoresistance due to conduction-band splitting in EuSe and EuTe

Physics Letters A ◽

10.1016/0375-9601(74)90096-6 ◽

1974 ◽

Vol 47 (1) ◽

pp. 39-40 ◽

Cited By ~ 4

Author(s):

Y. Shapira ◽

R.L. Kautz ◽

T.B. Reed

Keyword(s):

Conduction Band ◽

Positive Magnetoresistance ◽

Band Splitting

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Gallium antimonide (GaSb), conduction band, effective masses

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_238 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Conduction Band ◽

Gallium Antimonide ◽

Effective Masses

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Gallium antimonide (GaSb), higher conduction band minima, energy difference to lowest minimum

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_232 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Conduction Band ◽

Gallium Antimonide ◽

Energy Difference

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Electrical transport mechanism in the conduction band of gallium antimonide studied from Hall-mobility and transverse-magnetoresistance measurements

Physical Review B ◽

10.1103/physrevb.19.3159 ◽

1979 ◽

Vol 19 (6) ◽

pp. 3159-3166 ◽

Cited By ~ 12

Author(s):

P. C. Mathur ◽

Sushil Jain

Keyword(s):

Conduction Band ◽

Hall Mobility ◽

Electrical Transport ◽

Transport Mechanism ◽

Gallium Antimonide ◽

Transverse Magnetoresistance

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