Electrical transport mechanism in the conduction band of gallium antimonide studied from Hall-mobility and transverse-magnetoresistance measurements

1979 ◽  
Vol 19 (6) ◽  
pp. 3159-3166 ◽  
Author(s):  
P. C. Mathur ◽  
Sushil Jain
Keyword(s):  
Conduction Band ◽  
Hall Mobility ◽  
Electrical Transport ◽  
Transport Mechanism ◽  
Gallium Antimonide ◽  
Transverse Magnetoresistance

Hysteresis Reversible MoS2 Transistor

2021 ◽  
Author(s):  
Banglin Cao ◽  
Zegao Wang ◽  
Xuya Xiong ◽  
Libin Gao ◽  
Jiheng Li ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism ◽  
Rational Design ◽  
Electronic Device

An improved understanding of the origin of the electrical transport mechanism is of importance to the rational design of the highly performance electronic device. However, the complex interfacial environment and...

Electrical transport mechanism in Al/V2O5/Al microdevices

Ionics ◽  
2001 ◽  
Vol 7 (1-2) ◽  
pp. 130-137 ◽  
Author(s):  
C. V. Ramana ◽  
B. Srinivasulu Naidu ◽  
O. M. Hussain ◽  
C. Julien
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism

TEM Study and Hall Measurement of nc-Si Prepared by Controlled Deposition

1992 ◽  
Vol 283 ◽  
Author(s):  
Masami Nakata ◽  
Isamu Shimizu
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism ◽  
Crystalline Silicon ◽  
Nanocrystalline Silicon ◽  
Dominant Factor ◽  
Microscopic Structure ◽  
Hall Effect Measurements ◽  
Sample Structure ◽  
Controlled Deposition ◽  
General Transport

ABSTRACTWe report the results of a study in which we combined growth experiments with measurements of the nc-structure and of electrical transport Samples were prepared by plasma enhanced-CVD using SiF4 and H2 gases. We also added PH3 and H2 as control parameters for structural change. The microscopic structure was directly observed by TEM. Electron transport in nc-Si was investigated by Hall effect measurements performed at temperatures from 100K to 400K. We produced samples in which the Hall mobility was applied from general transport mechanism of poly crystalline silicon. However, from TEM observation, we conclude that dominant factor on electrical transport strongly depends on the sample structure, and nanocrystalline-silicon structure is so varied as to make it difficult to determine the transport mechanism without the observation of the microscopic structure.

scholarly journals Structure, microstructure, electrical transport mechanism and magnetoresistance in La0.8Ag0.2MnO3

2019 ◽  
Vol 1402 ◽  
pp. 066011
Author(s):  
B Kurniawan ◽  
N A Sahara ◽  
A Imadudin ◽  
I N Rahman ◽  
D S Razaq ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism

Influence of process parameters on the electrical transport mechanism in sprayed CdS films

1987 ◽  
Vol 15 (3) ◽  
pp. 189-208 ◽  
Author(s):  
Shailaja Kolhe ◽  
S.K. Kulkarni ◽  
M.G. Takwale ◽  
B.R. Marathe ◽  
V.G. Bhide
Keyword(s):  
Process Parameters ◽  
Electrical Transport ◽  
Transport Mechanism ◽  
Influence Of Process Parameters ◽  
Cds Films

Electron Transmission Through Modified Schottky Barriers

2001 ◽  
Vol 685 ◽  
Author(s):  
Kevin L. Jensen
Keyword(s):  
Schottky Barrier ◽  
Conduction Band ◽  
Current Density ◽  
Transport Mechanism ◽  
Airy Function ◽  
Numerical Approach ◽  
Schottky Barriers ◽  
Present Treatment ◽  
One Dimensional ◽  
Electron Transmission

AbstractThe effects of a Coulomb-like potential in the Schottky barrier existing between a material-diamond interface is analyzed. The inclusion is intended to mimic the effects of an ionized trap within the barrier, and therefore to account for charge injection into the conduction band of diamond via a Poole-Frenkel transport mechanism. The present treatment is to provide a qualitative account of the increase in current density near the inclusion, which can be substantial. The model is first reduced to an analytically tractable one-dimensional tunneling problem addressable by an Airy Function approach in order to investigate the nature of the effect. A more comprehensive numerical approach is then applied. Finally, statistical arguments are used to estimate emission site densities using the results of the aforementioned analysis.

Conduction band of InAs

1968 ◽  
Vol 46 (15) ◽  
pp. 1669-1675 ◽  
Author(s):  
Clarence C. Y. Kwan ◽  
John C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Valence Band ◽  
Conduction Band ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Impurity Content ◽  
Temperature Measurements ◽  
Energy Separation ◽  
Transverse Magnetoresistance

Measurements of transverse magnetoresistance and Hall effect have been made at 4.2 °K on various In2Se3-doped and In2Te3-doped InAs polycrystalline specimens with magnetic fields up to 3.2 Wb/m2. An analysis of the results gives values of electron concentrations n0 and n1 and mobilities μ0 and μ1 for both the (000) and [Formula: see text] conduction-band minima. From the values of n0 and n1, the energy separation of the (000) and [Formula: see text] minima E01 of pure InAs has been determined to be 0.70 + 0.02 eV and is found to decrease with increasing impurity content, the rate of reduction being 0.13 ± 0.02 eV/at.% selenium and 0.17 ± 0.03 eV/at.% tellurium. Room-temperature measurements of electroreflectance and infrared absorption have also been made, and these indicate that the variation in E01 is due to the movement of the (000) conduction-band minimum relative to the valence band.

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