Temperature Dependence of Carrier Concentrations and Conduction‐Band Minima Separation of Gallium Antimonide

1968 ◽  
Vol 39 (8) ◽  
pp. 3866-3869 ◽  
Author(s):  
C. Y. Liang
Keyword(s):  
Temperature Dependence ◽  
Conduction Band ◽  
Gallium Antimonide

Conduction Band-Tail Estimated from the Temperature Dependence of X1–X3Threshold Energy in Heavily-Doped n-GaP

1988 ◽  
Vol 27 (Part 1, No. 10) ◽  
pp. 1922-1928
Author(s):  
Tamio Endo ◽  
Yasushi Okino ◽  
Nobuhiko Itoh ◽  
Hiroyuki Kudo ◽  
Koichi Sugiyama
Keyword(s):  
Temperature Dependence ◽  
Conduction Band ◽  
Band Tail ◽  
Heavily Doped

Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 473-476
Author(s):  
Patrick Fiorenza ◽  
Marilena Vivona ◽  
Ferdinando Iucolano ◽  
Andrea Severino ◽  
Simona Lorenti ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Barrier Height ◽  
Conduction Band ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Semiconductor Interface ◽  
Tunneling Model ◽  
Mos Capacitors ◽  
Gate Current

We present a temperature-dependence electrical characterization of the oxide/semiconductor interface in MOS capacitors with a SiO2layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors. The post deposition annealing process in N2O allowed to achieve an interface state density Dit 9.0×1011cm-2eV-1below the conduction band edge. At room temperature, an electron barrier height (conduction band offset) of 2.8 eV was measured using the standard Fowler-Nordheim tunneling model. The electron conduction through the SiO2insulating layer was evaluated by studying the experimental temperature dependence of the gate current. In particular, the Fowler-Nordheim electron barrier height showed a negative temperature coefficient (dφB/dT= - 0.98 meV/°C), which is very close to the expected value for an ideal SiO2/4H-SiC system. This result, obtained for deposited SiO2layers, is an improvement compared to the values of the temperature coefficient of the Fowler-Nordheim electron barrier height reported for thermally grown SiO2. In fact, the smaller dependence ofφBon the temperature observed in this work represents a clear advantage of our deposited SiO2for the operation of MOSFET devices at high temperatures.

CONDUCTION BAND OF GaSb

1966 ◽  
Vol 44 (11) ◽  
pp. 2715-2728 ◽  
Author(s):  
H. B. Harland ◽  
J. C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Conduction Band ◽  
Electron Concentration ◽  
Electron Mobility ◽  
Impurity Level ◽  
Energy Separation ◽  
A Value

Measurements of transverse magnetoresistaiice and Hall effect have been made on various single-crystal n-type samples of GaSb at magnetic fields of up to 2.4 W/m2 and temperatures in the range 4.2–300 °K. An analysis of the results gives values and the temperature dependence for electron concentration n and electron mobility μ for both (000) and [Formula: see text] minima of the conduction band, the energy separation ΔE of (000) and [Formula: see text] minima, and a value for the effective mass m1* of electrons in the [Formula: see text] minima. Values of ΔE0 = 0.084 eV, d(ΔE)/dT = +0.8 × 10−4 eV/°C and m1* = 0.43 me are obtained, while the ratios of the electron mobilities μ0/μ1 lie in the range 5–21. The total number of observed electrons in the two bands, n0 + n1, is found to vary with temperature, and this result is interpreted in terms of an impurity level above the (000) minimum.

The First Fifty Billion Nanoseconds of Electron Photocarrier Evolution in Undoped a-Si:H

1990 ◽  
Vol 192 ◽  
Author(s):  
Homer Antoniadis ◽  
E.A. Schiff
Keyword(s):  
Electron Spin Resonance ◽  
Steady State ◽  
Temperature Dependence ◽  
Conduction Band ◽  
Electron Spin ◽  
Charge Collection ◽  
Spin Resonance ◽  
Emission Time ◽  
The Mean

ABSTRACTThe drift of electrons generated by a 3 ns illumination impulse was studied in several undoped a-Si:H specimens by using transient photocharge measurements from 10 ns to 50 sec. The transients show four stages of evolution: band transport, deep-trapping and subsequent re-emission, and recombination. From the temperature dependence of the emission time we estimated the mean energy of the trap distribution and the attempt-to-escape frequency associated with this trap to be 0.6 eV below the conduction band and 5×1012 sec−1 respectively; this trap has been identified in previous work with the D-center found in electron spin resonance. In addition the data resolve the two orders of magnitute discrepancy between mobility-lifetime estimates from earlier charge-collection experiments and from steady-state photoconductivity.

Sign in / Sign up

Export Citation Format

Share Document