Influence of grain boundaries and surface Debye temperature on the electrical resistance of thin gold films

1984 ◽  
Vol 29 (2) ◽  
pp. 645-650 ◽  
Author(s):  
P. M. Th. M. van Attekum ◽  
P. H. Woerlee ◽  
G. C. Verkade ◽  
A. A. M. Hoeben
Keyword(s):  
Grain Boundaries ◽  
Debye Temperature ◽  
Electrical Resistance ◽  
Gold Films

scholarly journals Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
M. Mirigliano ◽  
S. Radice ◽  
A. Falqui ◽  
A. Casu ◽  
F. Cavaliere ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Temperature Coefficient ◽  
Resistive Switching ◽  
Electrical Conduction ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
High Density ◽  
Gold Films ◽  
Temperature Coefficient Of Resistance ◽  
Nanostructured Gold

AbstractWe report the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in nanostructured gold films above the electrical percolation and in strong-coupling regime, from room down to cryogenic temperatures (24 K). Nanostructured continuous gold films are assembled by supersonic cluster beam deposition of Au aggregates formed in the gas phase. The structure of the cluster-assembled films is characterized by an extremely high density of randomly oriented crystalline nanodomains, separated by grain boundaries and with a large number of lattice defects. Our data indicates that space charge limited conduction and Coulomb blockade are at the origin of the anomalous electrical behavior. The high density of extended defects and grain boundaries causes the localization of conduction electrons over the entire investigated temperature range.

Electrical Resistance of Thin Triode‐Sputtered Gold Films

1968 ◽  
Vol 39 (6) ◽  
pp. 2948-2953 ◽  
Author(s):  
P. A. B. Toombs ◽  
P. Bennett
Keyword(s):  
Electrical Resistance ◽  
Gold Films

scholarly journals Nanocrystalline Porous Hydrogen Storage Based on Vanadium and Titanium Nitrides

2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
A. Goncharov ◽  
A. Guglya ◽  
A. Kalchenko ◽  
E. Solopikhina ◽  
V. Vlasov ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Electrical Resistance ◽  
Ion Beam ◽  
Hydrogen Desorption ◽  
Titanium Nitrides ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Mixed Beam ◽  
20 Nm ◽  
Absorption Characteristics

This review summarizes results of our study of the application of ion-beam assisted deposition (IBAD) technology for creation of nanoporous thin-film structures that can absorb more than 6 wt.% of hydrogen. Data of mathematical modeling are presented highlighting the structure formation and component creation of the films during their deposition at the time of simultaneous bombardment by mixed beam of nitrogen and helium ions with energy of 30 keV. Results of high-resolution transmission electron microscopy revealed that VNxfilms consist of 150–200 nm particles, boundaries of which contain nanopores of 10–15 nm diameters. Particles themselves consist of randomly oriented 10–20 nm nanograins. Grain boundaries also contain nanopores (3–8 nm). Examination of the absorption characteristics of VNx, TiNx, and(V,Ti)Nxfilms showed that the amount of absorbed hydrogen depends very little on the chemical composition of films, but it is determined by the structure pore. The amount of absorbed hydrogen at 0.3 MPa and 20°C is 6-7 wt.%, whereas the bulk of hydrogen is accumulated in the grain boundaries and pores. Films begin to release hydrogen even at 50°C, and it is desorbed completely at the temperature range of 50–250°C. It was found that the electrical resistance of films during the hydrogen desorption increases 104times.

Stretchable conductors: thin gold films on silicone elastomer

2003 ◽  
Vol 795 ◽  
Author(s):  
Stéphanie P. Lacour ◽  
Sigurd Wagner ◽  
Z. Suo
Keyword(s):  
Electrical Resistance ◽  
Tensile Strain ◽  
Scale Structure ◽  
Gold Layer ◽  
Silicone Elastomer ◽  
Gold Films ◽  
Electrically Conducting ◽  
Electrical Interconnects ◽  
Stretchable Conductors ◽  
Micrometer Scale

ABSTRACTThin stripes of gold deposited onto elastomeric substrates can be stretched reversibly by more than 20 % while remaining electrically conducting. We are developing such stripes to serve as electrical interconnects on stretchable electronic skins. The gold layers are 25-nm to 500-nm thick. We observe two different film morphologies: the stripe is either buckled and continuous, or flat and contains micrometer-long cracks. Stretchability is correlated with the thickness and initial topography of the gold layer. Stripes thicker than 100-nm fail electrically at tensile strain of ∼ 1 %, while thinner stripes remain conducting up to much larger strain. Upon stretching the buckled stripes flatten and break into islands of 1 to 100 micrometers on a side, while the initially microcracked stripes retain their micrometer scale structure. The electrical resistance of the buckled stripes is the lowest but the micro-textured stripes can be stretched more.

The Decay in Electrical Resistance in Evaporated Gold Films

1965 ◽  
Vol 4 (3) ◽  
pp. 161-164 ◽  
Author(s):  
Akira Kinbara ◽  
Yuji Sawatari
Keyword(s):  
Electrical Resistance ◽  
Gold Films
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