Theory of screening and electron mobility: Application ton-type silicon

B. A. Sanborn; P. B. Allen; G. D. Mahan

doi:10.1103/physrevb.46.15123

Theory of screening and electron mobility: Application ton-type silicon

Physical Review B ◽

10.1103/physrevb.46.15123 ◽

1992 ◽

Vol 46 (23) ◽

pp. 15123-15134 ◽

Cited By ~ 14

Author(s):

B. A. Sanborn ◽

P. B. Allen ◽

G. D. Mahan

Keyword(s):

Electron Mobility ◽

Type Silicon

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Impurity core effects on electron mobility in N type silicon

Journal of Physics C Solid State Physics ◽

10.1088/0022-3719/5/24/010 ◽

1972 ◽

Vol 5 (24) ◽

pp. 3473-3476 ◽

Cited By ~ 7

Author(s):

O P Daga ◽

W S Khokle

Keyword(s):

Electron Mobility ◽

Type Silicon

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Electron mobility in enhanced N-type silicon nanowire MOSFET

2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems ◽

10.1109/nems.2009.5068768 ◽

2009 ◽

Cited By ~ 2

Author(s):

Jie Chen ◽

Tao Guo ◽

Hang Guo

Keyword(s):

Electron Mobility ◽

Silicon Nanowire ◽

Type Silicon ◽

Silicon Nanowire Mosfet ◽

Nanowire Mosfet

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EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN AN INVERSION LAYER ON p‐TYPE SILICON

Applied Physics Letters ◽

10.1063/1.1754005 ◽

1964 ◽

Vol 4 (8) ◽

pp. 145-147 ◽

Cited By ~ 15

Author(s):

F. Fang ◽

S. Triebwasser

Keyword(s):

Electron Mobility ◽

Inversion Layer ◽

Surface Scattering ◽

Type Silicon ◽

P Type ◽

Effect Of Surface

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Phase-shift calculation of electron mobility inn-type silicon at low temperatures

Physical Review B ◽

10.1103/physrevb.24.2089 ◽

1981 ◽

Vol 24 (4) ◽

pp. 2089-2100 ◽

Cited By ~ 51

Author(s):

J. R. Meyer ◽

F. J. Bartoli

Keyword(s):

Phase Shift ◽

Electron Mobility ◽

Low Temperatures ◽

Type Silicon ◽

Shift Calculation

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The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

Solid-State Electronics ◽

10.1016/0038-1101(77)90100-9 ◽

1977 ◽

Vol 20 (7) ◽

pp. 609-616 ◽

Cited By ~ 178

Author(s):

Sheng S. Li ◽

W. Robert Thurber

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Type Silicon

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N-Type Silicon Electron Mobility and its Relationship to the Kink Effect for Nano-Scaled SOI NMOS Devices

Materials Science Forum - Research Trends in Contemporary Materials Science ◽

10.4028/0-87849-441-3.153 ◽

2007 ◽

pp. 153-158

Author(s):

M. Sarajlić ◽

R.M. Ramović

Keyword(s):

Electron Mobility ◽

Type Silicon ◽

Kink Effect

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Measurement of electron lifetime, electron mobility and band-gap narrowing in heavily doped p-type silicon

10.1109/iedm.1986.191101 ◽

1986 ◽

Cited By ~ 62

Author(s):

S.E. Swirhun ◽

Y.-H. Kwark ◽

R.M. Swanson

Keyword(s):

Band Gap ◽

Electron Mobility ◽

Electron Lifetime ◽

Type Silicon ◽

Heavily Doped ◽

Band Gap Narrowing ◽

P Type

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Electron Mobility and Drag Effect in p-Type Silicon

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.732 ◽

1985 ◽

Vol 24 (Part 1, No. 6) ◽

pp. 732-736 ◽

Cited By ~ 15

Author(s):

Makoto Morohashi ◽

Nobuhiko Sawaki ◽

Isamu Akasaki

Keyword(s):

Electron Mobility ◽

Drag Effect ◽

Type Silicon ◽

P Type

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Field dependence of electron mobility in high-resistivity n-type silicon at 77°K

Physics Letters A ◽

10.1016/0375-9601(69)90378-8 ◽

1969 ◽

Vol 29 (5) ◽

pp. 272-273

Author(s):

H. Neumann

Keyword(s):

Field Dependence ◽

Electron Mobility ◽

High Resistivity ◽

Type Silicon

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The dopant density and temperature dependence of electron mobility and resistivity in N-type silicon

10.6028/nbs.sp.400-33 ◽

1977 ◽

Cited By ~ 4

Author(s):

Sheng S Li

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Type Silicon

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