Effect of high pressure on radiative recombination in hydrogenated amorphous silicon

1981 ◽  
Vol 23 (2) ◽  
pp. 787-793 ◽  
Author(s):  
Bernard A. Weinstein
Keyword(s):  
High Pressure ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

scholarly journals Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

2013 ◽  
Author(s):  
R. Garcia-Hemansanz ◽  
E. Garcia-Hemme ◽  
D. Pastor ◽  
A. del Prado ◽  
I. Martil ◽  
...  
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

scholarly journals High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

2016 ◽  
Vol 28 (28) ◽  
pp. 5939-5942 ◽  
Author(s):  
Rongrui He ◽  
Todd D. Day ◽  
Justin R. Sparks ◽  
Nichole F. Sullivan ◽  
John V. Badding
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Pressure Chemical ◽  
Hydrogenated Amorphous

Kinetics of Silane Decomposition in High-Pressure Confined Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

2017 ◽  
Vol 56 (51) ◽  
pp. 14995-15000 ◽  
Author(s):  
Seyed Pouria Motevalian ◽  
Stephen C. Aro ◽  
Hiu Y. Cheng ◽  
Todd D. Day ◽  
Adri C. T. van Duin ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

Raman scattering in hydrogenated amorphous silicon under high pressure

1982 ◽  
Vol 42 (3) ◽  
pp. 197-200 ◽  
Author(s):  
Takeo Ishidate ◽  
Kuon Inoue ◽  
Kazuhiko Tsuji ◽  
Shigeru Minomura
Keyword(s):  
High Pressure ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Modelling of Staebler-Wronski Effect in Hydrogenated Amorphous Silicon under Moderate and Intense Illumination

2004 ◽  
Vol 230-232 ◽  
pp. 221-232 ◽  
Author(s):  
A.F. Meftah ◽  
A.M. Meftah ◽  
A. Merazga
Keyword(s):  
Hydrogen Atom ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Hydrogenated Amorphous Silicon ◽  
Defect Site ◽  
Mobile Hydrogen ◽  
Proposed Model ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Mobile Hydrogen Atom

A new model is developed for the Staebler-Wronski effect (SWE) in intrinsic a-Si:H. In this model, non-radiative recombination of the photogenerated carriers occurs at a weak bond close to a SiHHSi configuration, which allows a local creation of defect of the SiHD type. This defect can be annihilated by mobile hydrogen atom that has been emitted from an other distant SiHD defect as a result of non-radiative recombination at this defect site. In this study we have considered illumination intensities in the moderate and intense illumination range. In both cases, the proposed model reproduces many experimental features of the SWE known in the literature.

Confined High-Pressure Chemical Deposition of Hydrogenated Amorphous Silicon

2011 ◽  
Vol 134 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Neil F. Baril ◽  
Rongrui He ◽  
Todd D. Day ◽  
Justin R. Sparks ◽  
Banafsheh Keshavarzi ◽  
...  
Keyword(s):  
High Pressure ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Deposition ◽  
Pressure Chemical ◽  
Hydrogenated Amorphous
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