Radiative recombination in hydrogenated amorphous silicon

1980 ◽  
Vol 30 (3) ◽  
pp. 355-364 ◽  
Author(s):  
J. I. Pankove
Keyword(s):  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Modelling of Staebler-Wronski Effect in Hydrogenated Amorphous Silicon under Moderate and Intense Illumination

2004 ◽  
Vol 230-232 ◽  
pp. 221-232 ◽  
Author(s):  
A.F. Meftah ◽  
A.M. Meftah ◽  
A. Merazga
Keyword(s):  
Hydrogen Atom ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Hydrogenated Amorphous Silicon ◽  
Defect Site ◽  
Mobile Hydrogen ◽  
Proposed Model ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Mobile Hydrogen Atom

A new model is developed for the Staebler-Wronski effect (SWE) in intrinsic a-Si:H. In this model, non-radiative recombination of the photogenerated carriers occurs at a weak bond close to a SiHHSi configuration, which allows a local creation of defect of the SiHD type. This defect can be annihilated by mobile hydrogen atom that has been emitted from an other distant SiHD defect as a result of non-radiative recombination at this defect site. In this study we have considered illumination intensities in the moderate and intense illumination range. In both cases, the proposed model reproduces many experimental features of the SWE known in the literature.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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