Light‐induced radiative recombination centers in hydrogenated amorphous silicon

1980 ◽  
Vol 37 (8) ◽  
pp. 705-706 ◽  
Author(s):  
J. I. Pankove ◽  
J. E. Berkeyheiser
Keyword(s):  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Hydrogenated Amorphous Silicon ◽  
Recombination Centers ◽  
Hydrogenated Amorphous

Impurities and Metastable Centers in Amorphous Silicon Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
D. E. Carlson
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Internal Surfaces ◽  
Induced Motion ◽  
Recombination Centers ◽  
The Creation ◽  
Electronic Activity ◽  
Hydrogenated Amorphous

ABSTRACTAmorphous silicon solar cells are adversely affected by impurities through the creation of traps, recombination centers and metastable centers. The microstructure of discharged-produced, hydrogenated amorphous silicon (a-Si:H) appears to be strongly affected by the presence of impurities in the discharge atmosphere. A model is developed in which impurities create microvoids in a-Si:H, and traps, recombination centers and metastable centers are associated with the internal surfaces of the microvoids. In this model, hydrogen plays an important role in determining the electronic activity and diffusivity of impurities, and metastable centers are created by the trapping of holes near microvoids and the induced motion of hydrogen on the internal surfaces of the microvoids.

Annealing of Metastable Recombination Centers in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
Jong-Hwan Yoon ◽  
Yoon-Zik Lee
Keyword(s):  
Relaxation Time ◽  
Amorphous Silicon ◽  
Light Exposure ◽  
Hydrogenated Amorphous Silicon ◽  
Activation Energies ◽  
Exponential Time ◽  
Thermally Activated ◽  
Recombination Centers ◽  
Hydrogenated Amorphous ◽  
Annealing Defects

ABSTRACTWe report results on the annealing behaviors of light- and deposition-induced metastable recombination centers, as measured by steady-state photoconductivity, in undoped hydrogenated amorphous silicon. The relaxation time inferred from the stretched-exponential time law reveals a thermally activated behavior, and the activation energies are nearly identical in both (Ea=1.1eV). This value is much less than that of the light-induced darkconductivity relaxation (Ea=1.7eV) measured simultaneously with photoconductivity. While in the deposition-induced case both activation energies of dark- and photoconductivity relaxation time are identical. These results support that there is more than one kind of defect created by light exposure, and at least, as considering activation energies for annealing defects, the light-induced recombination center differ from other metastable defects.

Recombination Process in the As-Deposited State of Hydrogenated Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
Jong-Hwan Yoon
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Energy Levels ◽  
Hydrogenated Amorphous Silicon ◽  
Recombination Process ◽  
Defect States ◽  
Deep Defect ◽  
Recombination Centers ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

Intrinsic deep defect-related recombination process has been studied in a series of undoped hydrogenated amorphous silicon(a-Si:H) films grown under different deposition conditions. Steady-state photoconductivity (σph) was measured as a function of deep defect density Nd, Urbach energy Eu, and dark Fermi energy Ef. It was found that σph strongly depends on these parameters while Ef- stays at the energy levels lower than 0.82 eV below Ec, but it is nearly independent of those while Ef stays at above 0.82 eV. These behaviors were found to be independent of the sample deposition conditions. These results indicates that subgap defect states enclosed by E=0.82 eV and Ef are the dominant recombination centers.

Modelling of Staebler-Wronski Effect in Hydrogenated Amorphous Silicon under Moderate and Intense Illumination

2004 ◽  
Vol 230-232 ◽  
pp. 221-232 ◽  
Author(s):  
A.F. Meftah ◽  
A.M. Meftah ◽  
A. Merazga
Keyword(s):  
Hydrogen Atom ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Hydrogenated Amorphous Silicon ◽  
Defect Site ◽  
Mobile Hydrogen ◽  
Proposed Model ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Mobile Hydrogen Atom

A new model is developed for the Staebler-Wronski effect (SWE) in intrinsic a-Si:H. In this model, non-radiative recombination of the photogenerated carriers occurs at a weak bond close to a SiHHSi configuration, which allows a local creation of defect of the SiHD type. This defect can be annihilated by mobile hydrogen atom that has been emitted from an other distant SiHD defect as a result of non-radiative recombination at this defect site. In this study we have considered illumination intensities in the moderate and intense illumination range. In both cases, the proposed model reproduces many experimental features of the SWE known in the literature.

Recombination centers in phosphorous doped hydrogenated amorphous silicon

1982 ◽  
Vol 44 (10) ◽  
pp. 1423-1426 ◽  
Author(s):  
C.R. Wronski ◽  
B. Abeles ◽  
T. Tiedje ◽  
G.D. Cody
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Recombination Centers ◽  
Hydrogenated Amorphous
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