Hysteresis Reversible MoS2 Transistor

2021 ◽  
Author(s):  
Banglin Cao ◽  
Zegao Wang ◽  
Xuya Xiong ◽  
Libin Gao ◽  
Jiheng Li ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism ◽  
Rational Design ◽  
Electronic Device

An improved understanding of the origin of the electrical transport mechanism is of importance to the rational design of the highly performance electronic device. However, the complex interfacial environment and...

Electrical transport mechanism in Al/V2O5/Al microdevices

Ionics ◽  
2001 ◽  
Vol 7 (1-2) ◽  
pp. 130-137 ◽  
Author(s):  
C. V. Ramana ◽  
B. Srinivasulu Naidu ◽  
O. M. Hussain ◽  
C. Julien
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism

TEM Study and Hall Measurement of nc-Si Prepared by Controlled Deposition

1992 ◽  
Vol 283 ◽  
Author(s):  
Masami Nakata ◽  
Isamu Shimizu
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism ◽  
Crystalline Silicon ◽  
Nanocrystalline Silicon ◽  
Dominant Factor ◽  
Microscopic Structure ◽  
Hall Effect Measurements ◽  
Sample Structure ◽  
Controlled Deposition ◽  
General Transport

ABSTRACTWe report the results of a study in which we combined growth experiments with measurements of the nc-structure and of electrical transport Samples were prepared by plasma enhanced-CVD using SiF4 and H2 gases. We also added PH3 and H2 as control parameters for structural change. The microscopic structure was directly observed by TEM. Electron transport in nc-Si was investigated by Hall effect measurements performed at temperatures from 100K to 400K. We produced samples in which the Hall mobility was applied from general transport mechanism of poly crystalline silicon. However, from TEM observation, we conclude that dominant factor on electrical transport strongly depends on the sample structure, and nanocrystalline-silicon structure is so varied as to make it difficult to determine the transport mechanism without the observation of the microscopic structure.

scholarly journals Structure, microstructure, electrical transport mechanism and magnetoresistance in La0.8Ag0.2MnO3

2019 ◽  
Vol 1402 ◽  
pp. 066011
Author(s):  
B Kurniawan ◽  
N A Sahara ◽  
A Imadudin ◽  
I N Rahman ◽  
D S Razaq ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism

Influence of process parameters on the electrical transport mechanism in sprayed CdS films

1987 ◽  
Vol 15 (3) ◽  
pp. 189-208 ◽  
Author(s):  
Shailaja Kolhe ◽  
S.K. Kulkarni ◽  
M.G. Takwale ◽  
B.R. Marathe ◽  
V.G. Bhide
Keyword(s):  
Process Parameters ◽  
Electrical Transport ◽  
Transport Mechanism ◽  
Influence Of Process Parameters ◽  
Cds Films

Surfaces and Interfaces of Nanoscale Silicon Materials

2013 ◽  
Vol 1550 ◽  
Author(s):  
Sean R. Wagner ◽  
Pengpeng Zhang
Keyword(s):  
Electrical Transport ◽  
Rational Design ◽  
Critical Role ◽  
Volume Ratio ◽  
Molecular Structures ◽  
Prototype System ◽  
Electrical Transport Properties ◽  
Surface And Interface ◽  
Surfaces And Interfaces ◽  
Si Nanostructures

AbstractSurfaces and interfaces play a critical role in determining properties and functions of nanomaterials, in many cases dominating bulk properties, owing to the large surface- and interface-area-to-volume ratio. Using Si nanomembranes, a well-controlled two-dimensional single-crystalline semiconductor, as a prototype system, we discuss how surfaces and interfaces influence electrical transport properties at the nanoscale. We show that electronic conduction in Si nanomembranes is not determined by bulk dopants but by the interplay of surface and interface electronic structures with the “bulk” band structure of the thin Si membrane. Additionally, we describe our recent experimental results on the control of highly ordered molecular structures on Si surfaces, which is of intense interest for the integration of ordered organic thin films in silicon-based electronics. This could also potentially lead to the rational design of Si nanostructures with controlled properties through regulation of the surface chemistry.

Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions

2018 ◽  
Vol 20 (30) ◽  
pp. 19932-19937 ◽  
Author(s):  
Weifeng Jin ◽  
Xiaojing Mu ◽  
Kun Zhang ◽  
Zhengguo Shang ◽  
Lun Dai
Keyword(s):  
Schottky Barrier ◽  
Electrical Transport ◽  
Transport Mechanism ◽  
Single Nanowire ◽  
Schottky Junctions ◽  
Barrier Inhomogeneity

Schottky barrier inhomogeneity and its influence on the electrical transport mechanism of single nanowire-based Schottky junctions have been investigated.

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