Observation of dissipation asymmetries in tunnel junctions at high bias

1976 ◽  
Vol 14 (4) ◽  
pp. 1751-1757 ◽  
Author(s):  
A. F. Hebard
Keyword(s):  
Tunnel Junctions ◽  
High Bias

First-principles Study of Bias Effect on Magnetoresistance of Fe/MgO/Fe Tunnel Junctions

2013 ◽  
Vol 1577 ◽  
Author(s):  
Ning Deng ◽  
Hongguang Cheng
Keyword(s):  
Energy Level ◽  
Transport Properties ◽  
Bias Voltage ◽  
First Principles ◽  
Tunnel Junctions ◽  
First Principles Calculations ◽  
Bias Effect ◽  
High Bias Voltage ◽  
Interfacial States ◽  
High Bias

ABSTRACTWe studied the transport properties of the Fe/MgO/Fe and Fe/Ag/MgO/Ag/Fe magnetic tunnel junctions (MTJs) with 13-layer MgO barrier under bias voltage based on first-principles calculations. Our results showed that two features determine the TMR value decreases with bias of Fe/MgO/Fe MTJ: (1) interfacial states lying at 1.06 eV in spin down channel (2) the energy level of the spin down Δ1 band of the Fe electrode. Our results showed that an inserted Ag mono-layer at Fe/MgO interface can remarkably improve the TMR effect at a high bias voltage.

Light emission from high bias Al‐AlOx‐Au tunnel junctions

1989 ◽  
Vol 65 (1) ◽  
pp. 373-375 ◽  
Author(s):  
Q. Q. Shu ◽  
W. J. Wen ◽  
S. J. Xu
Keyword(s):  
Light Emission ◽  
Tunnel Junctions ◽  
High Bias

scholarly journals High bias voltage effect on spin-dependent conductivity and shot noise in carbon-doped Fe(001)∕MgO(001)∕Fe(001) magnetic tunnel junctions

2007 ◽  
Vol 91 (13) ◽  
pp. 132504 ◽  
Author(s):  
R. Guerrero ◽  
D. Herranz ◽  
F. G. Aliev ◽  
F. Greullet ◽  
C. Tiusan ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Shot Noise ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Carbon Doped ◽  
High Bias Voltage ◽  
High Bias

High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions

2009 ◽  
Vol 105 (7) ◽  
pp. 07D109 ◽  
Author(s):  
J. Z. Sun ◽  
M. C. Gaidis ◽  
G. Hu ◽  
E. J. O’Sullivan ◽  
S. L. Brown ◽  
...  
Keyword(s):  
Time Domain ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Torque ◽  
High Bias

Large Magnetoresistance at High Bias Voltage in Double Magnetic Tunnel Junctions

2004 ◽  
Vol 40 (4) ◽  
pp. 2287-2289 ◽  
Author(s):  
S. Colis ◽  
G. Gieres ◽  
T. Dimopoulos ◽  
L. Bar ◽  
J. Wecker ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
High Bias Voltage ◽  
High Bias

Tantalum superconducting tunnel junctions for photon counting detectors

2002 ◽  
Vol 12 (3) ◽  
pp. 145-148
Author(s):  
C. Jorel ◽  
P. Feautrier ◽  
J.-C. Villégier ◽  
A. Benoit
Keyword(s):  
Tunnel Junctions ◽  
Photon Counting ◽  
Superconducting Tunnel Junctions ◽  
Photon Counting Detectors

Tunnel Magnetoresistance Effect for Double Tunnel Junctions with Al Intermediate Layer.

2001 ◽  
Vol 25 (4−2) ◽  
pp. 767-770 ◽  
Author(s):  
T. Daibou ◽  
M. Oogane ◽  
Y. Ando ◽  
C. Kim ◽  
O. Song ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Tunnel Junctions ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance
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