high bias voltage
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2021 ◽  
Vol 150 ◽  
pp. 107250
Author(s):  
Mark Pallay ◽  
Ronald N. Miles ◽  
Shahrzad Towfighian

2018 ◽  
Vol 56 ◽  
pp. 37-40 ◽  
Author(s):  
Shixuan Han ◽  
Guo Ma ◽  
Shijie Xie ◽  
Wei Qin ◽  
Shenqiang Ren

2017 ◽  
Vol 5 (1) ◽  
pp. 229-237 ◽  
Author(s):  
Haiping Shi ◽  
Jianping Zheng ◽  
Baochang Cheng ◽  
Jie Zhao ◽  
Xiaohui Su ◽  
...  

Stress information can be written in PbS micro/nanowire-based two-terminal devices, and then erased by a relatively high bias voltage. The repeatable writing/erasing characteristics of nanostructure devices offer an avenue to develop reliable non-volatile piezoresistance memory.


2015 ◽  
Vol 26 ◽  
pp. 314-318 ◽  
Author(s):  
S.H. Liang ◽  
R. Geng ◽  
Q.T. Zhang ◽  
L. You ◽  
R.C. Subedi ◽  
...  

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