scholarly journals High bias voltage effect on spin-dependent conductivity and shot noise in carbon-doped Fe(001)∕MgO(001)∕Fe(001) magnetic tunnel junctions

2007 ◽  
Vol 91 (13) ◽  
pp. 132504 ◽  
Author(s):  
R. Guerrero ◽  
D. Herranz ◽  
F. G. Aliev ◽  
F. Greullet ◽  
C. Tiusan ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Shot Noise ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Carbon Doped ◽  
High Bias Voltage ◽  
High Bias

Large Magnetoresistance at High Bias Voltage in Double Magnetic Tunnel Junctions

2004 ◽  
Vol 40 (4) ◽  
pp. 2287-2289 ◽  
Author(s):  
S. Colis ◽  
G. Gieres ◽  
T. Dimopoulos ◽  
L. Bar ◽  
J. Wecker ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
High Bias Voltage ◽  
High Bias

First-principles Study of Bias Effect on Magnetoresistance of Fe/MgO/Fe Tunnel Junctions

2013 ◽  
Vol 1577 ◽  
Author(s):  
Ning Deng ◽  
Hongguang Cheng
Keyword(s):  
Energy Level ◽  
Transport Properties ◽  
Bias Voltage ◽  
First Principles ◽  
Tunnel Junctions ◽  
First Principles Calculations ◽  
Bias Effect ◽  
High Bias Voltage ◽  
Interfacial States ◽  
High Bias

ABSTRACTWe studied the transport properties of the Fe/MgO/Fe and Fe/Ag/MgO/Ag/Fe magnetic tunnel junctions (MTJs) with 13-layer MgO barrier under bias voltage based on first-principles calculations. Our results showed that two features determine the TMR value decreases with bias of Fe/MgO/Fe MTJ: (1) interfacial states lying at 1.06 eV in spin down channel (2) the energy level of the spin down Δ1 band of the Fe electrode. Our results showed that an inserted Ag mono-layer at Fe/MgO interface can remarkably improve the TMR effect at a high bias voltage.

Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

2005 ◽  
Vol 86 (8) ◽  
pp. 082501 ◽  
Author(s):  
T. Nozaki ◽  
A. Hirohata ◽  
N. Tezuka ◽  
S. Sugimoto ◽  
K. Inomata
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

2021 ◽  
Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
High Tunnel ◽  
Voltage Range ◽  
Negative Differential Resistance Effect ◽  
Magnetoresistance Ratio ◽  
Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

scholarly journals Signature of Coherent Transport in Epitaxial Spinel-Based Magnetic Tunnel Junctions Probed by Shot Noise Measurement

2012 ◽  
Vol 5 (5) ◽  
pp. 053003 ◽  
Author(s):  
Takahiro Tanaka ◽  
Tomonori Arakawa ◽  
Kensaku Chida ◽  
Yoshitaka Nishihara ◽  
Daichi Chiba ◽  
...  
Keyword(s):  
Shot Noise ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Noise Measurement ◽  
Coherent Transport

Generation of wide range and stable THz waves using a laser chaos and a high bias voltage

2013 ◽  
Author(s):  
Fumiyoshi Kuwashima ◽  
Takuya Shirao ◽  
Masahiko Tani ◽  
Kazuyoshi Kurihara ◽  
Kohji Yamamoto ◽  
...  
Keyword(s):  
Bias Voltage ◽  
High Bias Voltage ◽  
Wide Range ◽  
High Bias ◽  
Thz Waves
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