Light emission from high bias Al‐AlOx‐Au tunnel junctions

1989 ◽  
Vol 65 (1) ◽  
pp. 373-375 ◽  
Author(s):  
Q. Q. Shu ◽  
W. J. Wen ◽  
S. J. Xu
1985 ◽  
Vol 54 (3) ◽  
pp. 224-226 ◽  
Author(s):  
S. Ushioda ◽  
J. E. Rutledge ◽  
R. M. Pierce

1988 ◽  
Vol 38 (18) ◽  
pp. 12948-12958 ◽  
Author(s):  
A. Takeuchi ◽  
J. Watanabe ◽  
Y. Uehara ◽  
S. Ushioda

1986 ◽  
Vol 171 (1) ◽  
pp. 146-156 ◽  
Author(s):  
P. Dawson ◽  
D.G. Walmsley

2013 ◽  
Vol 1577 ◽  
Author(s):  
Ning Deng ◽  
Hongguang Cheng

ABSTRACTWe studied the transport properties of the Fe/MgO/Fe and Fe/Ag/MgO/Ag/Fe magnetic tunnel junctions (MTJs) with 13-layer MgO barrier under bias voltage based on first-principles calculations. Our results showed that two features determine the TMR value decreases with bias of Fe/MgO/Fe MTJ: (1) interfacial states lying at 1.06 eV in spin down channel (2) the energy level of the spin down Δ1 band of the Fe electrode. Our results showed that an inserted Ag mono-layer at Fe/MgO interface can remarkably improve the TMR effect at a high bias voltage.


1992 ◽  
Vol 31 (Part 2, No. 7A) ◽  
pp. L870-L873 ◽  
Author(s):  
Sukekatsu Ushioda ◽  
Yoichi Uehara ◽  
Masatoshi Takada ◽  
Koji Otsubo ◽  
Junichi Murota

1995 ◽  
Vol 51 (4) ◽  
pp. 2229-2238 ◽  
Author(s):  
Y. Uehara ◽  
J. Watanabe ◽  
S. Fujikawa ◽  
S. Ushioda

2020 ◽  
Vol 22 (9) ◽  
pp. 095006
Author(s):  
Saurabh Kishen ◽  
Jinal Tapar ◽  
Naresh Kumar Emani

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