Photoexcited carrier dynamics of thin film Cd3As2 grown on a GaAs(111)B substrate by molecular beam epitaxy

2021 ◽  
Vol 104 (9) ◽  
Author(s):  
Guihao Zhai ◽  
Jialin Ma ◽  
Hailong Wang ◽  
Jialiang Ye ◽  
Ting Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Dynamics ◽  
Photoexcited Carrier

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

scholarly journals Laser operation of Nd:LaF3 thin film grown by molecular beam epitaxy

1999 ◽  
Vol 35 (5) ◽  
pp. 398 ◽  
Author(s):  
E. Daran ◽  
D.P. Shepherd ◽  
T. Bhutta ◽  
C. Serrano
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Operation

Preparation of nano-structured InGaAs thin film by molecular beam epitaxy

2008 ◽  
Author(s):  
Yanping Yao ◽  
Chunling Liu ◽  
Zhongliang Qiao ◽  
Mei Li ◽  
Xin Gao ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Conductivity Study of Initial Stages of β-PdBi2 Formation on Bi/Si(111)

2018 ◽  
Vol 386 ◽  
pp. 110-115
Author(s):  
Maxim Viktorovich Ivanchenko ◽  
Elena Anatolyevna Borisenko ◽  
Maria Valeryevna Ryzhkova ◽  
Dmitry Anatolyevich Tsukanov
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Ultrathin Films ◽  
Room Temperature ◽  
Molecular Beam ◽  
Electrical Conductance ◽  
Layered Material ◽  
Bulk Crystals ◽  
Superconducting Properties

Bulk β-PdBi2 layered material is known as a low-temperature superconductor. Recently, ultrathin films of this material consisting of dozens of triple layers were grown by molecular beam epitaxy and demonstrated structural, electronic and superconducting properties similar to those of bulk crystals. In this paper, we showed that thin film of β-PdBi2 can be grown by alternative palladium and bismuth deposition and its electrical conductance was investigated at room temperature in comparison with the conductivity of bulk β - PdBi2.

Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film

2020 ◽  
Vol 10 (2) ◽  
pp. 272-277
Author(s):  
Niraj Bhattarai ◽  
Andrew W. Forbes ◽  
Rajendra P. Dulal ◽  
Ian L. Pegg ◽  
John Philip
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Weyl Semimetal ◽  
Image Position

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