scholarly journals Electronic properties of substitutional impurities in graphenelike C2N , tg−C3N4 , and hg−C3N4

2020 ◽  
Vol 102 (13) ◽  
Author(s):  
Saif Ullah ◽  
Pablo A. Denis ◽  
Marcos G. Menezes ◽  
Fernando Sato ◽  
Rodrigo B. Capaz
Keyword(s):  
Electronic Properties ◽  
Substitutional Impurities

scholarly journals Substitutional 4d and 5d impurities in graphene

2016 ◽  
Vol 18 (31) ◽  
pp. 21913-21920 ◽  
Author(s):  
Tomás Alonso-Lanza ◽  
Andrés Ayuela ◽  
Faustino Aguilera-Granja
Keyword(s):  
Transition Metals ◽  
Electronic Properties ◽  
Structural And Electronic Properties ◽  
Substitutional Impurities

We describe the structural and electronic properties of graphene doped with substitutional impurities of 4d and 5d transition metals.

Native defects and substitutional impurities in two-dimensional monolayer InSe

Nanoscale ◽  
2017 ◽  
Vol 9 (32) ◽  
pp. 11619-11624 ◽  
Author(s):  
Dan Wang ◽  
Xian-Bin Li ◽  
Hong-Bo Sun
Keyword(s):  
Electronic Properties ◽  
Two Dimensional ◽  
Native Defects ◽  
Ionization Energies ◽  
Substitutional Defects ◽  
Formation Energies ◽  
Substitutional Impurities

The electronic properties of native and substitutional defects in monolayer InSe, including formation energies and ionization energies are explored systematically. Also, the possible doping strategy for conductivity is proposed.

Electronic properties of substitutional impurities in InGaN monolayer quantum wells

2015 ◽  
Vol 106 (19) ◽  
pp. 192102 ◽  
Author(s):  
G. Alfieri ◽  
T. Tsutsumi ◽  
R. Micheletto
Keyword(s):  
Quantum Wells ◽  
Electronic Properties ◽  
Substitutional Impurities

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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