Electronic properties of substitutional impurities in InGaN monolayer quantum wells

2015 ◽  
Vol 106 (19) ◽  
pp. 192102 ◽  
Author(s):  
G. Alfieri ◽  
T. Tsutsumi ◽  
R. Micheletto
2005 ◽  
Vol 38 (4-6) ◽  
pp. 455-463 ◽  
Author(s):  
C. Morhain ◽  
X. Tang ◽  
M. Teisseire-Doninelli ◽  
B. Lo ◽  
M. Laügt ◽  
...  

2016 ◽  
Vol 18 (31) ◽  
pp. 21913-21920 ◽  
Author(s):  
Tomás Alonso-Lanza ◽  
Andrés Ayuela ◽  
Faustino Aguilera-Granja

We describe the structural and electronic properties of graphene doped with substitutional impurities of 4d and 5d transition metals.


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