Stability and electronic properties of native defects and substitutional impurities in GaN nanotubes

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Author(s):  
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R. J. Baierle ◽  
R. H. Miwa
Nanoscale ◽  
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Xian-Bin Li ◽  
Hong-Bo Sun

The electronic properties of native and substitutional defects in monolayer InSe, including formation energies and ionization energies are explored systematically. Also, the possible doping strategy for conductivity is proposed.


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We describe the structural and electronic properties of graphene doped with substitutional impurities of 4d and 5d transition metals.


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pp. 05DC05 ◽  
Author(s):  
Naomi Hirayama ◽  
Tsutomu Iida ◽  
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Yasuo Kogo ◽  
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...  

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pp. 1130-1135 ◽  
Author(s):  
Yuan Li ◽  
P. J. Lin-Chung

Nano Letters ◽  
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Author(s):  
Frédéric Joucken ◽  
Cristina Bena ◽  
Zhehao Ge ◽  
Eberth Quezada-Lopez ◽  
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...  

2020 ◽  
Vol 102 (13) ◽  
Author(s):  
Saif Ullah ◽  
Pablo A. Denis ◽  
Marcos G. Menezes ◽  
Fernando Sato ◽  
Rodrigo B. Capaz

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