Fast ion predictions from a simple hot-electron model

1985 ◽  
Vol 28 (8) ◽  
pp. 2591 ◽  
Author(s):  
Dushan Mitrovich
Keyword(s):  
Hot Electron ◽  
Electron Model ◽  
Fast Ion

scholarly journals Hot electron relaxation: Exact solution for a many-electron model

1997 ◽  
Vol 55 (20) ◽  
pp. 13564-13574 ◽  
Author(s):  
K. Schönhammer ◽  
C. Wöhler
Keyword(s):  
Exact Solution ◽  
Hot Electron ◽  
Electron Model ◽  
Electron Relaxation

Lucky-electron model of channel hot-electron injection in MOSFET'S

1984 ◽  
Vol 31 (9) ◽  
pp. 1116-1125 ◽  
Author(s):  
Simon Tam ◽  
Ping-Keung Ko ◽  
Chenming Hu
Keyword(s):  
Electron Injection ◽  
Hot Electron ◽  
Electron Model ◽  
Hot Electron Injection

Hot-electron model in doped silicon thermistors

2002 ◽  
Author(s):  
D. Liu ◽  
M. Galeazzi ◽  
D. McCammon ◽  
W. T. Sanders ◽  
B. Smith ◽  
...  
Keyword(s):  
Hot Electron ◽  
Electron Model ◽  
Doped Silicon

Study of PtSi/Si(100) Interfaces by Ballistic -Electronemission Microscopy

1993 ◽  
Vol 320 ◽  
Author(s):  
Bruce R. Turner ◽  
L. J. Schowalter ◽  
E. Y. Lee ◽  
J. R. Jimenez
Keyword(s):  
Band Structure ◽  
Schottky Barrier ◽  
Mean Free Path ◽  
Momentum Conservation ◽  
Hot Electron ◽  
Attenuation Length ◽  
Electron Model ◽  
Semiconductor Interface ◽  
Turn On ◽  
Good Spatial Resolution

ABSTRACTThe PtSi/Si interface is of technological interest for Schottky barrier infrared detectors. We are studying PtSi/Si heterostructures using ballistic -electron-emission microscopy (BEEM), an STM-based technique that uses the STM tip to inject hot electrons at a particular energy into the metal overlayer. The BEEM technique allows imaging of the Schottky barrier with good spatial resolution (of the order of tens of nanometers) and allows the measurement of the hot electron attenuation length in the metal overlayer. Our results indicate a Schottky barrier of 0.87 eV for PtSi/Si n-type, and an attenuation length of 4 nm for electrons with an energy of 1 eV above the metal Fermi level. The attenuation length we measure is a convolution of the electron elastic and inelastic mean free path lengths.We have also used an ac BEEM technique to observe inelastic scattering events at the metalsemiconductor interface in PtSi/Si(100) n-type. There are several features visible in the spectrum, including one at 1040 meV which we attribute to optical phonon-assisted electron-hole pair creation near the metal- semiconductor interface in analogy to a feature we have observed at the same energy in the Au/Si(100) ac BEEM spectrum. Higher-energy features appear at 1230 meV and 1300 meV. Similar features appeared in the Au/Si(100) spectrum at 1120 meV and 1230 meV.We also suggest that the traditional assumption of momentum conservation parallel to the Schottky barrier interface is unnecessary to obtain a quadratic turn on of the BEEM current above the threshold. If electrons are elastically scattered at the interface so that momentum is not conserved, the increase in the ratio of the density of states in the semiconductor to those in the metal will also give a quadratic turn on even when the band structure is much more complicated than a nearly free electron model. This model also explains why the simple square-root dependence of the photoresponse on wavelength above threshold observed in all metal/semiconductor Schottky barriers despite the complications in band structure.

An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering

2012 ◽  
Vol 59 (4) ◽  
pp. 983-993 ◽  
Author(s):  
Alban Zaka ◽  
Pierpaolo Palestri ◽  
Quentin Rafhay ◽  
Raphaël Clerc ◽  
Matteo Iellina ◽  
...  
Keyword(s):  
Electron Scattering ◽  
Hot Electron ◽  
Electron Model

scholarly journals Enhanced laser ion acceleration from mass-limited targets

2008 ◽  
Vol 26 (2) ◽  
pp. 225-234 ◽  
Author(s):  
J. Limpouch ◽  
J. Psikal ◽  
A.A. Andreev ◽  
K. YU. Platonov ◽  
S. Kawata
Keyword(s):  
Laser Energy ◽  
Ion Acceleration ◽  
Acceleration Process ◽  
Beam Diameter ◽  
Hot Electron ◽  
Laser Beam Diameter ◽  
Ion Energy ◽  
Particle In Cell ◽  
Geometrical Form ◽  
Fast Ion

AbstractLaser interactions with mass-limited targets are studied here via numerical simulations using our relativistic electromagnetic two-dimensional particle-in cell code including all three-velocity components. Analytical estimates are derived to clarify the simulation results. Mass-limited targets preclude the undesirable spread of the absorbed laser energy out of the interaction zone. Mass-limited targets, such as droplets, are shown here to enhance the achievable fast ion energy significantly due to an increase in the hot electron concentration. For given target dimensions, the existence is demonstrated for an optimum laser beam diameter when ion acceleration is efficient and geometrical energy losses are still acceptable. Ion energy also depends on the target geometrical form and rounded targets are found to enhance the energy of accelerated ions. The acceleration process is accompanied by generation of the dipole radiation in addition to the ordinary scattering of the electromagnetic wave.

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