scholarly journals Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
F. Feix ◽  
T. Flissikowski ◽  
K. K. Sabelfeld ◽  
V. M. Kaganer ◽  
M. Wölz ◽  
...  
Keyword(s):  
Comparative Analysis ◽  
Quantum Wells ◽  
Radiative Efficiency ◽  
Gan Nanowires ◽  
Carrier Recombination ◽  
Quantum Disks

Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields

ACS Photonics ◽  
2021 ◽  
Author(s):  
Thomas Auzelle ◽  
Mani Azadmand ◽  
Timur Flissikowski ◽  
Manfred Ramsteiner ◽  
Katrin Morgenroth ◽  
...  
Keyword(s):  
Electric Fields ◽  
Radiative Efficiency ◽  
Gan Nanowires

Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy

2009 ◽  
Vol 95 (9) ◽  
pp. 091910 ◽  
Author(s):  
V. Liuolia ◽  
S. Marcinkevičius ◽  
A. Pinos ◽  
R. Gaska ◽  
M. S. Shur
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Transmission Spectroscopy

Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells

2003 ◽  
Vol 798 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoshinobu Kawaguchi ◽  
Shigeo Fujita
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Transition Probability ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Semiconductor Quantum Wells ◽  
Emission Lifetime ◽  
Quantum Disks ◽  
The Difference ◽  
Optical Transition Probability

ABSTRACTThe dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.

Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires

Nano Letters ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 4654-4660 ◽  
Author(s):  
Javier Bartolomé ◽  
Michael Hanke ◽  
David van Treeck ◽  
Achim Trampert
Keyword(s):  
Shape Evolution ◽  
Gan Nanowires ◽  
Quantum Disks
Sign in / Sign up

Export Citation Format

Share Document