Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy

2009 ◽  
Vol 95 (9) ◽  
pp. 091910 ◽  
Author(s):  
V. Liuolia ◽  
S. Marcinkevičius ◽  
A. Pinos ◽  
R. Gaska ◽  
M. S. Shur
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Transmission Spectroscopy

Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells

2007 ◽  
Vol 41 (5-6) ◽  
pp. 419-424 ◽  
Author(s):  
S.M. Olaizola ◽  
W.H. Fan ◽  
D.J. Mowbray ◽  
M.S. Skolnick ◽  
P.J. Parbrook ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Recombination Dynamics ◽  
Ingan Quantum Wells

scholarly journals Time-resolved observation of ballistic acceleration of electrons in GaAs quantum wells

1992 ◽  
Vol 7 (3B) ◽  
pp. B133-B136 ◽  
Author(s):  
W Sha ◽  
T B Norris ◽  
W J Schaff ◽  
K E Meyer
Keyword(s):  
Quantum Wells ◽  
Time Resolved

Anomalous Mn Spin Resonance Detected by Time-Resolved Kerr Effect in CdMnTe Quantum Wells

2002 ◽  
Vol 190 (3) ◽  
pp. 715-718 ◽  
Author(s):  
F. Teppe ◽  
C. Camilleri ◽  
D. Scalbert ◽  
Y.G. Semenov ◽  
M. Nawrocki ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Kerr Effect ◽  
Time Resolved ◽  
Spin Resonance

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Bloch oscillations in In-Ga-As-P/In-Ga-As-P heterostructures observed with time-resolved transmission spectroscopy

1996 ◽  
Vol 54 (7) ◽  
pp. 4420-4423 ◽  
Author(s):  
G. C. Cho ◽  
T. Dekorsy ◽  
H. J. Bakker ◽  
H. Kurz ◽  
A. Kohl ◽  
...  
Keyword(s):  
Bloch Oscillations ◽  
Time Resolved ◽  
Transmission Spectroscopy
Sign in / Sign up

Export Citation Format

Share Document