A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm

2002 ◽  
Vol 92 (10) ◽  
pp. 6215-6218 ◽  
Author(s):  
A. J. Bennett ◽  
P. N. Stavrinou ◽  
C. Roberts ◽  
R. Murray ◽  
G. Parry ◽  
...  
2006 ◽  
Vol 73 (16) ◽  
Author(s):  
Vladimir A. Fonoberov ◽  
Khan A. Alim ◽  
Alexander A. Balandin ◽  
Faxian Xiu ◽  
Jianlin Liu

2019 ◽  
Vol 531 (6) ◽  
pp. 1970025 ◽  
Author(s):  
Florian Hackl ◽  
Martyna Grydlik ◽  
Petr Klenovský ◽  
Friedrich Schäffler ◽  
Thomas Fromherz ◽  
...  

Nano Energy ◽  
2021 ◽  
pp. 106145
Author(s):  
Xianshao Zou ◽  
Jianqi Dong ◽  
Kang Zhang ◽  
Weihua Lin ◽  
Meiyuan Guo ◽  
...  

2019 ◽  
Vol 531 (6) ◽  
pp. 1800259 ◽  
Author(s):  
Florian Hackl ◽  
Martyna Grydlik ◽  
Petr Klenovský ◽  
Friedrich Schäffler ◽  
Thomas Fromherz ◽  
...  

2013 ◽  
Vol 1534 ◽  
pp. A51-A56
Author(s):  
J.L. Casas Espinola ◽  
T.V. Torchynska ◽  
L. D. Cruz. Diosdado ◽  
G. Polupan

Papers in the Appendix were published in electronic format as Volume 1534


2012 ◽  
Vol 68 ◽  
pp. 466-468 ◽  
Author(s):  
G.Q. Liu ◽  
L. Li ◽  
L.X. Gong ◽  
F.L. Tang ◽  
Q. Wang

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.


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