Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

2018 ◽  
Vol 382 (17) ◽  
pp. 1181-1184 ◽  
Author(s):  
Lihua Teng ◽  
Tianran Jiang ◽  
Xia Wang ◽  
Tianshu Lai
Keyword(s):  
Quantum Wells ◽  
Spin Polarization ◽  
Spin Relaxation ◽  
Relaxation Mechanism ◽  
Carrier Recombination ◽  
Recombination Dynamics

scholarly journals Carrier recombination dynamics inInxGa1−xN/GaNmultiple quantum wells

2010 ◽  
Vol 82 (8) ◽  
Author(s):  
Colin-N. Brosseau ◽  
Mathieu Perrin ◽  
Carlos Silva ◽  
Richard Leonelli
Keyword(s):  
Quantum Wells ◽  
Carrier Recombination ◽  
Recombination Dynamics

Studies on Electron Spin Relaxation in AlGaAs/GaAs Multi Quantum Wells

2011 ◽  
Vol 143-144 ◽  
pp. 216-219
Author(s):  
Yu Wu
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Density ◽  
Relaxation Mechanism ◽  
Electron Spin Polarization ◽  
Time Resolved ◽  
Pump Probe ◽  
Electron Spin Relaxation ◽  
Probe Spectroscopy

Time-resolved circularly polarized pump-probe spectroscopy is used to study the carrier density dependence of the electron spin polarization dynamics in AlGaAs/GaAs multi quantum wells at room temperature. Experimental results show that the spin relaxation time increases with the carrier density, which is in conformity with D'yakonov-Perel relaxation mechanism.

scholarly journals Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence

2017 ◽  
Vol 7 (3) ◽  
pp. 817-821 ◽  
Author(s):  
Kan-Hua Lee ◽  
Keith W. J. Barnham ◽  
John S. Roberts ◽  
Diego Alonso-Alvarez ◽  
N. P. Hylton ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Recombination ◽  
Recombination Dynamics

scholarly journals Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

2012 ◽  
Vol 4 (6) ◽  
pp. 2382-2389 ◽  
Author(s):  
Lifang Xu ◽  
D. Patel ◽  
C. S. Menoni ◽  
J. M. Pikal ◽  
Jeng-Ya Yeh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Recombination ◽  
Recombination Dynamics

Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells

2007 ◽  
Vol 41 (5-6) ◽  
pp. 419-424 ◽  
Author(s):  
S.M. Olaizola ◽  
W.H. Fan ◽  
D.J. Mowbray ◽  
M.S. Skolnick ◽  
P.J. Parbrook ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Recombination Dynamics ◽  
Ingan Quantum Wells

Electron Spin Relaxation in Semiconductor Quantum Wells

2012 ◽  
Vol 424-425 ◽  
pp. 155-158
Author(s):  
Yu Wu ◽  
Qian Shou
Keyword(s):  
Relaxation Time ◽  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Density ◽  
Relaxation Mechanism ◽  
Spin Relaxation Time ◽  
Multiple Quantum ◽  
Pump Probe ◽  
Electron Spin Relaxation

The dependence of electron spin relaxation on the carrier density are investigated based on the D’yakonov-Perel relaxation mechanism. Experimental results obtained by using femtosecond pump-probe technique in AlGaAs/GaAs multiple quantum wells at room temperature show that the spin relaxation time increases from 58 to 82ps at carrier density of 1×1017 to 1×1018cm－3 consistent with the theoretical prediction. This result reveals that with the increment of the carrier density, the spin orbit interaction reduces due to the more frequent momentum scattering and the spin relaxation time prolongs

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Piezoelectric Field
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