scholarly journals Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

2016 ◽  
Vol 5 (5) ◽  
Author(s):  
Eric Colegrove ◽  
Steven P. Harvey ◽  
Ji-Hui Yang ◽  
James M. Burst ◽  
David S. Albin ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Phosphorus Diffusion ◽  
Diffusion Mechanisms

Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms

2014 ◽  
Vol 116 (14) ◽  
pp. 144904 ◽  
Author(s):  
Yiheng Lin ◽  
Hiroshi Yasuda ◽  
Manfred Schiekofer ◽  
Bernhard Benna ◽  
Rick Wise ◽  
...  
Keyword(s):  
Phosphorus Diffusion ◽  
Diffusion Mechanisms

First-principles study of phosphorus diffusion in silicon: Interstitial- and vacancy-mediated diffusion mechanisms

2003 ◽  
Vol 82 (12) ◽  
pp. 1839-1841 ◽  
Author(s):  
Xiang-Yang Liu ◽  
Wolfgang Windl ◽  
Keith M. Beardmore ◽  
Michael P. Masquelier
Keyword(s):  
First Principles ◽  
Phosphorus Diffusion ◽  
First Principles Study ◽  
Diffusion Mechanisms

“Preparation of Single Crystalline Gold Films for ED Studies”

1972 ◽  
Vol 30 ◽  
pp. 634-635
Author(s):  
Joseph D. C. Peng
Keyword(s):  
Crystal Morphology ◽  
Diffraction Theory ◽  
Scattering Matrix ◽  
Vacuum Evaporation ◽  
Gold Films ◽  
Matrix Formulation ◽  
Silver Films ◽  
Single Crystalline ◽  
Grating Pattern ◽  
Stacking Disorder

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Synthesis of Jumbo-size Single Crystalline Bi$lt;inf$gt;2$lt;/inf$gt;Se$lt;inf$gt;3$lt;/inf$gt; Nanoplates and Nanoribbons by Vapor Transportation

2014 ◽  
Vol 29 (11) ◽  
pp. 1199
Author(s):  
LI Xiao-Shuai ◽  
WANG Zeng-Mei ◽  
ZHU Ming-Fang ◽  
WANG Shan-Peng ◽  
TAO Xu-Tang ◽  
...  
Keyword(s):  
Single Crystalline

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Indentation response of single-crystalline GaAs in the nano-, micro-, and macroregime

2007 ◽  
Vol 98 (8) ◽  
pp. 735-741 ◽  
Author(s):  
Frank Bergner ◽  
Michael Schaper ◽  
Ralf Hammer ◽  
Manfred Jurisch ◽  
Andre Kleinwechter ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Indentation Response

Plasticity of Single Crystalline Al3X Intermetallic Compounds

1991 ◽  
Author(s):  
David E. Luzzi ◽  
David P. Pope ◽  
Vaclay Vitek
Keyword(s):  
Intermetallic Compounds ◽  
Single Crystalline
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