First-principles study of phosphorus diffusion in silicon: Interstitial- and vacancy-mediated diffusion mechanisms
2008 ◽
Vol 20
(13)
◽
pp. 135220
◽
2020 ◽
Vol 111
(11-12(6))
◽
pp. 819-819
Keyword(s):
2020 ◽
Vol 112
(5-6(9))
◽
pp. 312-312
Keyword(s):