Theoretical investigation of impurity scattering limited mobility in quantum wells: The influence of wave‐function modeling

1993 ◽  
Vol 73 (1) ◽  
pp. 233-238 ◽  
Author(s):  
J. L. Thobel ◽  
L. Baudry ◽  
F. Dessenne ◽  
M. Charef ◽  
R. Fauquembergue
Keyword(s):  
Wave Function ◽  
Quantum Wells ◽  
Theoretical Investigation ◽  
Impurity Scattering ◽  
Limited Mobility

Deep Impurities with Collision Delay

2018 ◽  
Author(s):  
Klaus Morawetz
Keyword(s):  
Wave Function ◽  
Kinetic Equation ◽  
Elastic Scattering ◽  
Response Function ◽  
Plasma Oscillation ◽  
Impurity Scattering ◽  
Fermi Momentum ◽  
Screening Length ◽  
Plasma Mode ◽  
Dissipative Mechanism

The linearised nonlocal kinetic equation is solved analytically for impurity scattering. The resulting response function provides the conductivity, plasma oscillation and Fermi momentum. It is found that virial corrections nearly compensate the wave-function renormalizations rendering the conductivity and plasma mode unchanged. Due to the appearance of the correlated density, the Luttinger theorem does not hold and the screening length is influenced. Explicit results are given for a typical semiconductor. Elastic scattering of electrons by impurities is the simplest but still very interesting dissipative mechanism in semiconductors. Its simplicity follows from the absence of the impurity dynamics, so that individual collisions are described by the motion of an electron in a fixed potential.

scholarly journals Mobility Enhancement in Square Quantum Wells: Symmetric Modulation of the Envelop Wave Function

2010 ◽  
Vol 20 (3) ◽  
pp. 193
Author(s):  
Doan Nhat Quang ◽  
Nguyen Huyen Tung ◽  
Nguyen Trung Hong ◽  
Tran Thi Hai
Keyword(s):  
Experimental Data ◽  
Wave Function ◽  
Low Temperature ◽  
Quantum Wells ◽  
Quantum Transport ◽  
Variational Approach ◽  
Theoretical Study ◽  
Recent Experimental Data ◽  
Carrier Distribution ◽  
Analytic Expressions

We present a theoretical study of the effects from symmetric modulation of the envelop wave function on quantum transport in square quantum wells (QWs). Within the variational approach we obtain analytic expressions for the carrier distribution and their scattering in symmetric two-side doped square QWs. Roughness-induced scattering are found significantly weaker than those in the asymmetric one-side doped counterpart. Thus, we propose symmetric modulation of the wave function as an efficient method for enhancement of the roughness-limited QW mobility. Our theory is able to well reproduce the recent experimental data about low-temperature transport of electrons and holes in two-side doped square QWs, e.g., the mobility dependence on the channel width, which have not been explained so far.

Exciton Bleaching in p-Type Single and Double Quantum Wells: The Effects of Subband Occupation and Wave Function Overlap

1997 ◽  
Vol 164 (1) ◽  
pp. 73-76 ◽  
Author(s):  
M. Kemerink ◽  
P. M. Koenraad ◽  
A. Parlangeli ◽  
P.C.M. Christianen ◽  
R. Van Schaijk ◽  
...  
Keyword(s):  
Wave Function ◽  
Quantum Wells ◽  
Double Quantum ◽  
P Type

THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

2005 ◽  
Vol 19 (21) ◽  
pp. 3353-3377 ◽  
Author(s):  
V. A. VETTCHINKINA ◽  
A. BLOM ◽  
M. A. ODNOBLYUDOV
Keyword(s):  
Monte Carlo ◽  
Quantum Wells ◽  
Electric Fields ◽  
Carrier Transport ◽  
Impurity Scattering ◽  
Resonant Scattering ◽  
Interface Roughness ◽  
The Monte Carlo Method ◽  
Analytic Expressions ◽  
Different Temperatures

We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.

Fine-structure features due to wave-function localization in coupled GaAs-AlxGa1−xAs quantum wells

1992 ◽  
Vol 46 (8) ◽  
pp. 4748-4751 ◽  
Author(s):  
D. C. Reynolds ◽  
K. R. Evans ◽  
B. Jogai ◽  
C. E. Stutz ◽  
P. W. Yu
Keyword(s):  
Wave Function ◽  
Fine Structure ◽  
Quantum Wells
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