scholarly journals Filtration-induced production of conductive/robust Cu films on cellulose paper by low-temperature sintering in air

2018 ◽  
Vol 5 (7) ◽  
pp. 172417 ◽  
Author(s):  
Shintaro Sakurai ◽  
Yusuke Akiyama ◽  
Hideya Kawasaki
Keyword(s):  
Low Temperature ◽  
Low Cost ◽  
Metal Nanoparticle ◽  
Low Temperature Sintering ◽  
Cu Films ◽  
Cellulose Paper ◽  
Conductive Films ◽  
Paper Electronics ◽  
Cu Film ◽  
Organic Decomposition

Cellulose paper is an attractive substrate for paper electronics because of its advantages of flexibility, biodegradability, easy incorporation into composites, low cost and eco-friendliness. However, the micrometre-sized pores of cellulose paper make robust/conductive films difficult to deposit onto its surface from metal-nanoparticle-based inks. We developed a Cu-based composite ink to deposit conductive Cu films onto cellulose paper via low-temperature sintering in air. The Cu-based inks consisted of a metallo-organic decomposition ink and formic-acid-treated Cu flakes. The composite ink was heated in air at 100°C for only 15 s to give a conductive Cu film (7 × 10 −5  Ω cm) on the cellulose paper. Filtration of the Cu-based composite ink accumulated Cu flakes on the paper, which enabled formation of a sintered Cu film with few defects. A strategy was developed to enhance the bending stability of the sintered Cu films on paper substrates using polyvinylpyrrolidone-modified Cu flakes and amine-modified paper. The resistance of the Cu films increased only 1.3-fold and 1.1-fold after 1000 bending cycles at bending radii of 5 mm and 15 mm, respectively. The results of this study provide an approach to increasing the bending stability of Cu films on cellulose paper.

scholarly journals Use of decomposable polymer-coated submicron Cu particles with effective additive for production of highly conductive Cu films at low sintering temperature

2017 ◽  
Vol 5 (5) ◽  
pp. 1033-1041 ◽  
Author(s):  
Yingqiong Yong ◽  
Mai Thanh Nguyen ◽  
Tetsu Yonezawa ◽  
Takashi Asano ◽  
Masaki Matsubara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fine Particles ◽  
Sintering Temperature ◽  
Low Temperature Sintering ◽  
Cu Films ◽  
Conductive Films ◽  
Low Sintering Temperature ◽  
Effective Additive

Decomposable polymer was used for low temperature sintering of Cu fine particles for conductive films.

scholarly journals Nanocomposite Inks Based on Nickel–Silver Core–Shell and Silver Nanoparticles for Fabrication Conductive Coatings at Low-Temperature Sintering

2021 ◽  
Vol 5 (1) ◽  
pp. 15
Author(s):  
Anna Pajor-Świerzy ◽  
Franciszek Szendera ◽  
Radosław Pawłowski ◽  
Krzysztof Szczepanowicz
Keyword(s):  
Silver Nanoparticles ◽  
Low Temperature ◽  
Low Cost ◽  
Future Application ◽  
Core Shell ◽  
Low Temperature Sintering ◽  
Ag Nps ◽  
Conductive Coatings ◽  
Nickel Silver ◽  
Silver Core

Nanocomposite inks composed of nickel–silver core–shell and silver nanoparticles (NPs) can combine the advantages of lower cost, high conductivity, and low-temperature sintering processes, which have attracted much attention in the development of materials for printed flexible electronics. In this context, in the present paper, we report the process of preparation of nanocomposite ink containing nickel–silver core–shell nanoparticles, as the main filler, and silver nanoparticles, as doping material, and their application for the fabrication of conductive coatings. It was found that the addition of a low concentration of Ag NPs to ink formulation based mainly on low-cost Ni-Ag NPs improves the conductive properties of coatings fabricated by ink deposition on a glass substrate. Two types of prepared nanocomposite ink coatings showed promising properties for future application: (1) doped with 0.5% of Ag NPs sintered at 200 °C as low cost for larger industrial application and, (2) containing 1% of Ag NPs sintered at 150 °C for the fabrication of conductive printed patterns on flexible substrates. The conductivity of such nanocomposite films was similar, about of 6 × 106 S/m, which corresponds to 35% of that for a bulk nickel.

A low temperature and air-sinterable copper–diamine complex-based metal organic decomposition ink for printed electronics

2018 ◽  
Vol 6 (24) ◽  
pp. 6406-6415 ◽  
Author(s):  
Yue Dong ◽  
Zhijie Lin ◽  
Xiaodong Li ◽  
Qi Zhu ◽  
Ji-Guang Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Printed Electronics ◽  
Cu Films ◽  
Air Atmosphere ◽  
Metal Organic ◽  
Organic Decomposition

A Cu–diamine formulated ink for obtaining flexible conductive Cu films in an air atmosphere at temperatures as low as 130 °C.

scholarly journals Low temperature sintering process of copper fine particles under nitrogen gas flow with Cu2+-alkanolamine metallacycle compounds for electrically conductive layer formation

RSC Advances ◽  
2016 ◽  
Vol 6 (15) ◽  
pp. 12048-12052 ◽  
Author(s):  
Tetsu Yonezawa ◽  
Hiroki Tsukamoto ◽  
Yingqiong Yong ◽  
Mai Thanh Nguyen ◽  
Masaki Matsubara
Keyword(s):  
Low Temperature ◽  
Gas Flow ◽  
Fine Particles ◽  
Low Cost ◽  
Low Temperature Sintering ◽  
Conductive Layer ◽  
Sintering Process ◽  
Layer Formation ◽  
Nitrogen Gas ◽  
Electrically Conductive

A novel low cost sintering process of copper fine particles to a copper conductive layer with Cu2+-alkanolamine metallacycle complexes at as low as 100 °C without reductive gas flow.

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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