scholarly journals Use of decomposable polymer-coated submicron Cu particles with effective additive for production of highly conductive Cu films at low sintering temperature

2017 ◽  
Vol 5 (5) ◽  
pp. 1033-1041 ◽  
Author(s):  
Yingqiong Yong ◽  
Mai Thanh Nguyen ◽  
Tetsu Yonezawa ◽  
Takashi Asano ◽  
Masaki Matsubara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fine Particles ◽  
Sintering Temperature ◽  
Low Temperature Sintering ◽  
Cu Films ◽  
Conductive Films ◽  
Low Sintering Temperature ◽  
Effective Additive

Decomposable polymer was used for low temperature sintering of Cu fine particles for conductive films.

scholarly journals In Search of Magnetic Properties of Samarium Cobalt (Sm2Co17) within a Low-Temperature Sintering Process

2021 ◽  
Vol 16 (3) ◽  
pp. 517-524
Author(s):  
Poppy Puspitasari ◽  
A. Muhammad ◽  
A. A. Permanasari ◽  
T. Pasang ◽  
S. M. S. N. S. Zahari ◽  
...  
Keyword(s):  
Magnetic Material ◽  
Magnetic Properties ◽  
Low Temperature ◽  
Functional Groups ◽  
Sintering Temperature ◽  
Alkyl Halides ◽  
High Coercivity ◽  
Low Temperature Sintering ◽  
Magnetic Anisotropy Energy ◽  
Low Sintering Temperature

Samarium cobalt is known as super high density magnetic material with large magnetic anisotropy energy. Samarium–cobalt exhibits manipulative magnetic properties as a rare-earth material which has different properties in a low sintering temperature. It is therefore of paramount importance to investigate samarium cobalt (Sm2Co17) magnetic properties in the low temperature sintering condition. Sm2Co17, which is utilized in this research, is synthesized via the sol–gel process at sintering temperatures of 400, 500, and 600 °C. Subsequently, the crystallites indicate the formation of a single-phase Sm2Co17 on all the samples in all temperature variations. Moreover, the peaks in the X-ray diffraction analysis of crystallite sizes calculated using the Scherrer equation are 17.730, 15.197, and 13.296 nm at 400, 500, and 600 °C. Through scanning electron microscopy, the particles are found to be relatively large and agglomerated, with average sizes of 143.65, 168.78, and 237.26 nm. The functional groups are also analyzed via Fourier-transform infrared spectroscopy, which results in the appearance of several bonds in the samples, for example, alkyl halides, alkanes, and esters with aromatic functional groups on the fingerprint area and alkynes, alkyl halides, and alcohol functional groups at a wavelength of above 1500 cm. The test results of the magnetic properties using vibrating-sample magnetometer (VSM) revealed high coercivity and retentivity in the samples sintered at 400 °C. However, the highest saturation occurs in the samples sintered at 600 ℃. At a low sintering temperature (below 1000 °C), samarium cobalt shows as the soft magnetic material. Copyright © 2021 by Authors, Published by BCREC Group. This is an open access article under the CC BY-SA License (https://creativecommons.org/licenses/by-sa/4.0). 

Low Temperature Sintering of Lead-Free BaTiO3-Based X9R Ceramics with Bi2O3 Dopant and Assisted by LiF-CaF2 Flux Agent

2014 ◽  
Vol 906 ◽  
pp. 31-36 ◽  
Author(s):  
Bao Lin Zhang ◽  
Bin Bin Zhang ◽  
Ning Ning Wang ◽  
Jun Zhang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Temperature Stability ◽  
Lead Free ◽  
Low Temperature Sintering ◽  
Pure Silver ◽  
Flux Agent ◽  
Low Sintering Temperature

The sintering temperature of BaTiO3powder was reduced to 950°C due to the Bi2O3-LiF-CaF2addition.Excellent densification was achieved after sintering at 950°C for 10h. The low sintering temperature of newly developed capacitor materials allows a co-firing with pure silver electrodes.The dielectric constant and the temperature stability of the dielectric constant satisfied the X9R standard, which dielectric properties of were ε25°C1115, ΔC/C25°C±12% (55~200°C), tanδ1.5% (25°C).

Low-Temperature Sintering and Microwave Dielectric Properties of the Zn2SiO4 Ceramics

2009 ◽  
Vol 66 ◽  
pp. 104-107 ◽  
Author(s):  
Ying Dai ◽  
Yao Sun ◽  
Wen Chen
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Microwave Dielectric Properties ◽  
Low Temperature Sintering ◽  
Sintering Aid ◽  
Microwave Dielectric ◽  
Low Sintering Temperature

Willemite ceramics (Zn2SiO4) possess excellent millimeter-wave dielectric properties, but it also has a high sintering temperature above 1300°C by traditional solid-state reaction and relatively large negative τf value. Zn2SiO4 nanoparticles synthesized by Sol–Gel method were used to improve the sintering and dielectric properties of the Zn2SiO4 ceramics. Using the nanoparticles, Zn2SiO4 ceramics can be sintered at a low temperature, 1150°C and exhibited improved microwave dielectric properties of εr =6.62, Q × f=24500 GHz, τf =-59ppm/°C. By adding TiO2 with high positive τf value (+450 ppm/°C) and CuO as sintering aid, near zero τf value and low sintering temperature can be achieved. With 11wt% of TiO2 and 5 wt% of CuO, an εr value of 9.3, a Q × f value of 12200GHz and a τf value of -11 ppm/°C were obtained at 1000°C, confirming the promising potential of the CuO-added TiO2-Zn2SiO4 ceramics as candidate materials for low–temperature cofired ceramic (LTCC) devices.

Low-Temperature Sintering Lead-Free Barium Titanate-Based X7P Ceramics with Bi2O3 Dopant and ZnO–B2O3 Flux Agent

2012 ◽  
Vol 560-561 ◽  
pp. 886-891
Author(s):  
Bao Lin Zhang ◽  
Shun Hua Wu
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Temperature Stability ◽  
Lead Free ◽  
Low Temperature Sintering ◽  
Pure Silver ◽  
Flux Agent ◽  
Low Sintering Temperature

The sintering temperature of BaTiO3 powder was reduced to 870°C due to the H3BO3-ZnO-Bi2O3 addition.Excellent densification was achieved after sintering at 870°C for 15h. The low sintering temperature of newly developed capacitor materials allows a co-firing with pure silver electrodes.The dielectric constant and the temperature stability of the dielectric constant satisfied the X7P requirements, which dielectric properties of were ε25°C≥ 2800, εr/εr25°C≤±10% (–55~125°C), tanδ≤1.5% (25°C).

scholarly journals Filtration-induced production of conductive/robust Cu films on cellulose paper by low-temperature sintering in air

2018 ◽  
Vol 5 (7) ◽  
pp. 172417 ◽  
Author(s):  
Shintaro Sakurai ◽  
Yusuke Akiyama ◽  
Hideya Kawasaki
Keyword(s):  
Low Temperature ◽  
Low Cost ◽  
Metal Nanoparticle ◽  
Low Temperature Sintering ◽  
Cu Films ◽  
Cellulose Paper ◽  
Conductive Films ◽  
Paper Electronics ◽  
Cu Film ◽  
Organic Decomposition

Cellulose paper is an attractive substrate for paper electronics because of its advantages of flexibility, biodegradability, easy incorporation into composites, low cost and eco-friendliness. However, the micrometre-sized pores of cellulose paper make robust/conductive films difficult to deposit onto its surface from metal-nanoparticle-based inks. We developed a Cu-based composite ink to deposit conductive Cu films onto cellulose paper via low-temperature sintering in air. The Cu-based inks consisted of a metallo-organic decomposition ink and formic-acid-treated Cu flakes. The composite ink was heated in air at 100°C for only 15 s to give a conductive Cu film (7 × 10 −5  Ω cm) on the cellulose paper. Filtration of the Cu-based composite ink accumulated Cu flakes on the paper, which enabled formation of a sintered Cu film with few defects. A strategy was developed to enhance the bending stability of the sintered Cu films on paper substrates using polyvinylpyrrolidone-modified Cu flakes and amine-modified paper. The resistance of the Cu films increased only 1.3-fold and 1.1-fold after 1000 bending cycles at bending radii of 5 mm and 15 mm, respectively. The results of this study provide an approach to increasing the bending stability of Cu films on cellulose paper.

Low temperature sintering of nano-SiC using a novel Al8B4C7 additive

2010 ◽  
Vol 25 (3) ◽  
pp. 471-475 ◽  
Author(s):  
Sea-Hoon Lee ◽  
Byung-Nam Kim ◽  
Hidehiko Tanaka
Keyword(s):  
Grain Size ◽  
Liquid Phase ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Applied Pressure ◽  
Liquid Phase Sintering ◽  
Low Temperature Sintering ◽  
Densification Rate ◽  
Sintering Additive ◽  
Average Grain Size

Al8B4C7 was used as a sintering additive for the densification of nano-SiC powder. The average grain size was approximately 70 nm after sintering SiC-12.5wt% Al8B4C7 at 1550 °C. The densification rate strongly depended on the sintering temperature and the applied pressure. The rearrangement of SiC particles occurred at the initial shrinkage, while viscous flow and liquid phase sintering became important at the middle and final stage of densification.

Studies on Structural, Microwave Dielectric Properties, and Low-Temperature Sintering of 1.52Li2O-0.36Nb2O5-1.34TiO2 Ceramic

2012 ◽  
Vol 512-515 ◽  
pp. 1226-1230
Author(s):  
Qun Zeng ◽  
Yong Heng Zhou
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric Ceramic ◽  
Low Temperature Sintering ◽  
Dielectric Ceramic ◽  
Microwave Dielectric ◽  
M Phase ◽  
Two Phases

The structure, microwave dielectric properties and low-temperature sintering of a new Li2O-Nb2O5-TiO2 system ceramic with the Li2O: Nb2O5: TiO2 mole ratio of 1.52: 0.36: 1.34 have been investigated in this study. The 1.52Li2O-0.36Nb2O5-1.34TiO2 (LNT) ceramic is composed of two phases, the “M-Phase” and Li2TiO3 solid solution (Li2TiO3ss) phase. This new microwave dielectric ceramic has low intrinsic sintering temperature ( ~ 1100 oC ) and good microwave dielectric properties of middle permittivity (εr ~38.6), high Q×f value up to 7712 GHz, and near zero τf value (~ 4.64 ppm/oC). In addition, the sintering temperature of the LNT ceramics could be lowered down effectively from 1100 oC to 900 oC by adding 1 wt.% B2O3. Good microwave dielectric properties of εr = 42.5, Q*f =6819 GHz and τf = 2.7 ppm/oC could be obtained at 900 oC, which indicate the ceramics would be promising candidates for low-temperature co-fired ceramics (LTCC) applications.

Low Temperature Sintering of (Ca0.9375Sr0.0625)0.25(Li0.5Sm0.5)0.75TiO3 Microwave Dielectric Ceramics

2010 ◽  
Vol 663-665 ◽  
pp. 1028-1031
Author(s):  
Yue Ming Li ◽  
Hua Zhang ◽  
Zhu Mei Wang ◽  
Yan Hong ◽  
Zong Yang Shen
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Low Temperature Sintering ◽  
Microwave Dielectric Ceramics ◽  
Microwave Dielectric ◽  
Dielectric Ceramics

The sintering behavior and microwave dielectric properties of the (Ca0.9375Sr0.0625)0.25(Li0.5Sm0.5)0.75TiO3 (CSLST) ceramics doped with different amounts of Li2O-B2O3-SiO2-CaO-Al2O3 (LBSCA) glass were investigated. The sintering temperature of the CSLST ceramics can be effectively reduced over 200oC due to the addition of LBSCA glass. For the 5 wt% LBSCA-doped CSLST ceramics, which are sintered at only 1000 oC for 5 h, show optimum microwave dielectric properties as follows: εr=84.74, Qf=2446 GHz and τf=-12.48 ppm/oC.

Low Temperature Sintering Ba3Ti5Nb6O28 Ceramics with Tunable Temperature Coefficient of Dielectric Constant

2008 ◽  
Vol 368-372 ◽  
pp. 170-172 ◽  
Author(s):  
Dong Guo ◽  
Zhi Yuan Ling ◽  
Xing Hu
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Low Temperature ◽  
Temperature Coefficient ◽  
Sintering Temperature ◽  
Low Temperature Sintering

A middle permittivity dielectrics with the tunable temperature coefficient of dielectric constant (τε) in the BaO-TiO2-Nb2O5 system, Ba3Ti5Nb6O28, has been synthesized and characterized. The dielectric properties of Ba3Ti5Nb6O28 measured at 1MHz are as follows: dielectric constant (εr) ~38, dielectric loss (tanδ)<0.0002, temperature coefficient of dielectric constant (τε)~-22ppm/°C. The Ba3Ti5Nb6O28 phase satisfies the requirements of NP0 (MLCC) dielectrics, but the sintering temperature of the Ba3Ti5Nb6O28 phase (1250~1300°C) is too high to be co-fired with Ag or Cu electrodes. To lower the sintering temperature, an appropriate amount of ZnO-B2O3 frit (5~7wt.%) was added to the Ba3Ti5Nb6O28 phase and dense ceramics were obtained at the sintering temperature lower than 1000°C. Furthermore, the CaNb2O6 phase with the positive τε of 65ppm/°C was incorporated into the Ba3Ti5Nb6O28 phase to adjust the temperature coefficient of dielectric constant from negative to positive(-22~30ppm/°C). Near zero τε ceramics with high εr (38) and low tanδ (0.0002) were obtained at the composition of Ba3Ti5Nb6O28/ CaNb2O6/ ZB frit=76:17:7 wt.%.

HIGH POTENTIAL GRADIENT OF ZnO VARISTORS PREPARED BY Y2O3-DOPING AND LOW-TEMPERATURE SINTERING

2009 ◽  
Vol 23 (25) ◽  
pp. 3013-3022 ◽  
Author(s):  
LEI KE ◽  
DONG-MEI JIANG ◽  
CHUN-XIA WANG ◽  
XUE-MING MA
Keyword(s):  
Low Temperature ◽  
Sintering Temperature ◽  
Early Period ◽  
Potential Gradient ◽  
High Energy ◽  
High Potential ◽  
Low Temperature Sintering ◽  
Experimental Conditions ◽  
Zno Varistors ◽  
Lower Temperature

A high potential gradient of ZnO varistors were fabricated by Y 2 O 3-doping and low-temperature sintering. The value of the potential gradient increased to 2460.5 V/mm with the Y 2 O 3 content of 0.08 mol% and the sintering temperature of 800°C. The effects of Y 2 O 3-doping and sintering temperature on the electrical properties of ZnO varistors were investigated. Under the given experimental conditions, additive Y 2 O 3 exists in the form of Y 2 O 3 phase after sintering at 800°C. High-energy ball-milling in the early period of the experiment induced the grain refinement and realized the sintering formation at the lower temperature of 800°C. Both Y 2 O 3-doping and low-temperature sintering restrained the ZnO grain growth and increased the potential gradient.

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