Polyaniline as Transparent Carrier Injection Electrode Compatible with Low Temperature Poly(p-Pheniline Vinylene) Conversion Process

2002 ◽  
Vol 374 ◽  
pp. 439-444 ◽  
Author(s):  
Silmar Travain ◽  
Luiz Libardi ◽  
Alexandre Marletta ◽  
JosE Giacometti ◽  
Francisco Guimaraes ◽  
...  
Keyword(s):  
Low Temperature ◽  
Conversion Process ◽  
Carrier Injection

Polyaniline as Transparent Carrier Injection Electrode Compatible with Low Temperature Poly(p-Pheniline Vinylene) Conversion Process

2002 ◽  
Vol 374 (1) ◽  
pp. 439-444
Author(s):  
SILMAR A. TRAVAIN ◽  
LUIZ H. LIBARDI ◽  
ALEXANDRE MARLETTA ◽  
JOSé A. GIACOMETTI ◽  
FRANCISCO E. G. GUIMARãES ◽  
...  
Keyword(s):  
Low Temperature ◽  
Conversion Process ◽  
Carrier Injection

Low temperature adsorption and site-conversion process of CO on the Ni(111) surface

2012 ◽  
Vol 606 (23-24) ◽  
pp. 1830-1836 ◽  
Author(s):  
Atsushi Beniya ◽  
Noritake Isomura ◽  
Hirohito Hirata ◽  
Yoshihide Watanabe
Keyword(s):  
Low Temperature ◽  
Conversion Process

Fate of Benzalkonium Chloride in a Sewage Sludge Low Temperature Conversion Process Investigated by LC-LC/ESI-MS/MS

2007 ◽  
Vol 35 (1) ◽  
pp. 81-87 ◽  
Author(s):  
Heike Sütterlin ◽  
Rainer Trittler ◽  
Sebastian Bojanowski ◽  
Ernst A. Stadlbauer ◽  
Klaus Kümmerer
Keyword(s):  
Sewage Sludge ◽  
Low Temperature ◽  
Benzalkonium Chloride ◽  
Conversion Process ◽  
Esi Ms

InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer

MRS Advances ◽  
2016 ◽  
Vol 1 (48) ◽  
pp. 3295-3300 ◽  
Author(s):  
Jin-Kwon Park ◽  
Jae-Hoon Han ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Current Density ◽  
Direct Reaction ◽  
Carrier Injection ◽  
Zn Diffusion ◽  
Optical Attenuation ◽  
Variable Optical Attenuator ◽  
Low Temperature Process ◽  
Injection Current Density

ABSTRACTIn this study, we successfully demonstrate a carrier-injection InGaAsP variable optical attenuator (VOA) with a lateral P-I-N junction formed by Ni-InGaAsP alloy and Zn diffusion on a III-V on insulator (III-V-OI) wafer. The Ni-InGaAsP alloy for the n+ junction is formed by direct reaction between Ni and InGaAsP after annealing at 350°C. The p+ junction is formed by the Zn diffusion at 500°C using Zn doped spin-on glass (SOG). By both techniques, we successfully reduce the sheet and contact resistivity in the lateral P-I-N junction even with the relatively low-temperature process as compared with the P-I-N junction formed by conventional Si and Be ion implantation. By injecting carriers into the InGaAsP waveguide through the lateral P-I-N junction, we achieve the optical attenuation of -40 dB/mm with an injection current density of 40 mA/mm at a 1.55 μm wavelength.

scholarly journals FORMATION OF IMPURITIES IN SYNTHESIS GAS AT STAGE OF CONVERSION OF CARBON MONOXIDE TO HYDROGEN IN AMMONIA PRODUCTION

2021 ◽  
Vol 64 (5) ◽  
pp. 50-56
Author(s):  
Tatyana V. Ivanova ◽  
Alexander A. Il'in ◽  
Ruslan N. Rumyantsev ◽  
Anastasia A. Kournikova ◽  
Alexander P. Ilyin
Keyword(s):  
Carbon Monoxide ◽  
Low Temperature ◽  
Gas Phase ◽  
Synthesis Gas ◽  
Ammonia Synthesis ◽  
Conversion Process ◽  
Effect Of Temperature ◽  
Co2 Removal ◽  
Ammonia Production ◽  
Medium Temperature

The article analyzes the work of the department for the conversion of carbon monoxide with water vapor to hydrogen as part of the ammonia synthesis unit. The effect of temperature and duration of operation of the medium-temperature conversion catalyst on the technical and technological parameters of the process is shown. The catalytic conversion of carbon monoxide is an important component of the hydrogen production process in the industrial technology of deep processing of natural gas. In modern ammonia synthesis units, the conversion process takes place in two stages: first, at a temperature of 360 – 430 °C on iron-chromium, and then at 190 – 260 °C on a copper-containing catalyst. It was found that along with the main products (H2, CO2), the presence of undesirable impurities of ammonia, amines, alcohols, acetates and formates was detected in the synthesis gas. It is shown that the main by-product at the stage of medium-temperature conversion is ammonia, the content of which in the condensate reaches 80-85%. Methanol is formed as a by-product both at the stage of medium-temperature (9-13%) and low-temperature conversion (87-91%). Most of the methanol generated during the conversion process is condensed with water in separators, while the rest goes to the CO2 removal system. In the separator, where the temperature is 160-162 °C, on average 68% of methanol remains in the gas phase, and in the separator, where deeper gas cooling is applied to 72 °C, about 81% of methanol remains in the condensate. To decrease the methanol content, it is necessary to lower the conversion temperature and increase the gas space velocity. Under the conditions of ammonia production from methanol and ammonia, a mixture of amines of varying degrees of substitution is formed, predominantly methylamine (CH3)NH2 and demytylamine (CH3)2NH2. Moreover, about 35-40% of the formed amines goes into condensate, and most of it remains in the gas phase and goes to the stage of cleaning from CO2. In the production of ammonia, solutions based on potash - K2CO3 are used to clean the converted gas from CO2, which absorb organic impurities, which are formed mainly at the stage of low-temperature conversion. Impurities impair the operation of the purification stage and cause foaming of solutions. One of the reasons for foaming is the presence of organic matter degradation products in the solution.

scholarly journals Релаксация тока в монокристаллах TlGa-=SUB=-1-x-=/SUB=-Dy-=SUB=-x-=/SUB=-Se-=SUB=-2-=/SUB=- (x=0.01; 0.03)

2020 ◽  
Vol 62 (7) ◽  
pp. 1022
Author(s):  
С.Н. Мустафаева ◽  
К.М. Гусейнова ◽  
М.М. Асадов
Keyword(s):  
Low Temperature ◽  
Flight Time ◽  
Charge Carriers ◽  
Physical Parameters ◽  
Relaxation Processes ◽  
Carrier Injection ◽  
Contact Charging ◽  
Deep Traps ◽  
Effective Mobility ◽  
Temperature Relaxation

Abstract The low-temperature relaxation processes in TlGa_1 – _ x Dy_ x Se_2 ( x = 0.01, 0.03) single crystals have been studied experimentally. The physical parameters which characterize the electron processes in Ag–TlGa_1 – _ x Dy_ x Se_2–Ag samples have been determined using the estafette transfer mechanism of the charge formed at deep traps due to the carrier injection from a contact: the effective mobility of the charge transferred due to deep centers, the sample contact capacity, the region of accumulation of the charge in the samples, the contact charging constant, and the flight time of charge carriers through the sample.

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