The Role of Bi 2 O 3 Interfacial Layer in Improvement of Ferroelectric Properties of SrBi 2 Ta 2 O 9 Thin Films Deposited by Liquid-Delivery MOCVD

2002 ◽  
Vol 46 (1) ◽  
pp. 205-214 ◽  
Author(s):  
Nak-Jin Seong ◽  
Woong-Chul Shin ◽  
Eun-Suck Choi ◽  
Sung-Nam Ryoo ◽  
Soon-Gil Yoon
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Ferroelectric Properties ◽  
Liquid Delivery

The role of nanoporosity on the local piezo and ferroelectric properties of lead titanate thin films

2015 ◽  
Vol 3 (5) ◽  
pp. 1035-1043 ◽  
Author(s):  
Alichandra Castro ◽  
Paula Ferreira ◽  
Brian J. Rodriguez ◽  
Paula M. Vilarinho
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Lead Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Piezoelectric Response ◽  
Nanoporous Films ◽  
Switching Behaviour ◽  
Dense Films

Nanoporous PbTiO3 films present enhanced tetragonality at lower temperatures than respective dense films. Moreover, the porosity present in the nanoporous films allows an increase of the local piezoelectric response and a decrease of the local coercive field. As a result, these nanoporous films might be used to improve the switching behaviour of ferroelectric thin films.

Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vacancy Concentration ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Low Oxygen ◽  
Partial Pressures ◽  
Pzt Films

AbstractThe properties of ferroelectric thin films can be significantly influenced by the presence of point defects. The concentration of vacancies presented in these thin films is known to be one of the key parameters causing the degradation of these films when these films are subjected to polarization reversals.To study the effects of the vacancy concentration on the ferroelectric properties, sol gel PZT films and powders were annealed in different oxygen partial pressures. For the PZT films, the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure. Samples annealed at low oxygen partial pressure (for instance, 10−3 and 2×10−5 atmosphere), which has more Pb and O2 depletions and consequently has more Pb and O2 vacancies, cannot be switched easily. The ratios of coercive field after and before fatigue increase as the defect concentrations of the annealed samples increase.

The role of excess Pb and PbO overpressure on the microstructural development in polycrystalline PZT thin films

1994 ◽  
Vol 52 ◽  
pp. 582-583
Author(s):  
M. J. Lefevre ◽  
D. B. Dimos ◽  
J. S. Speck
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Optical Data Storage ◽  
Optical Data ◽  
Microstructural Development

Ferroelectric thin films have recently received considerable attention because of their potential in a range of device applications including both volatile and non-volatile memories, optical data storage, and other electrooptic applications (e.g. waveguides, switches, and modulators). The Pb-based perovskites, such as Pb(Zr,Ti)O3, have many properties that make them attractive for such applications because of their high switchable remanant polarization. In addition, many applications require integration of the ferroelectric with semiconductors. In our work we are studying the crystallization sequence of PZT 40/60 (PbZr0.40Ti0.60O3) grown on platinized silicon substrates, with an overall structure given as PZT/Pt/Ti/SiO2Si. The Ti and Pt are sequentially evaporated onto the oxidized Si substrate. Alkoxide-derived films are spun onto these substrates to form a dry amorphous gel2. The crystallization of the sol-gel film proceeds upon heating to temperatures in the range of 400-700°C. Lead volatility is one of the critical issues in the crystallization of Pb-based perovskite thin films. We have carried out a systematic study on the role of a lead atmosphere in crystallization for PZT (40/60). When heat treated the film forms a transitory pyrochlore phase at intermediate temperatures before transforming to the perovskite phase. This non-ferroelectric pyrochlore phase may stabilize if lead stoichiometry is not maintained, leading to poor optical and ferroelectric properties in the thin films.

Role of abnormal grain growth on the ferroelectric properties of SrBi2Ta2O9 thin films fabricated by R.F. Magnetron sputtering

1998 ◽  
Vol 21 (1-4) ◽  
pp. 419-428 ◽  
Author(s):  
Choelhwyi Bae ◽  
Jeon-Kook Lee ◽  
Si-Hyung Lee ◽  
Yoon Baek Park ◽  
Hyung-Jin Jung
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Grain Growth ◽  
Ferroelectric Properties ◽  
Abnormal Grain Growth

The Role of Precursor Chemistry in the Ferroelectric Properties of Donor Doped Pb(Zr,Ti)O3 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Laura Fè ◽  
B. Malič ◽  
G. Norga ◽  
M. Kosec ◽  
D. J. Wouters ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Acetate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Chemistry ◽  
Film Properties ◽  
Acetate Lead ◽  
Rectangular Hysteresis Loop ◽  
Ferroelectric Capacitors

AbstractModified sol-gel processes have been developed for the preparation of precursor solutions of undoped, La and Ta doped PZT (25/75). These processes use different solvents (methoxyethanol, butoxyethanol) and different lead sources (lead acetate, lead oxide). Due to variations in the structure and in the composition of the solutions, significantly different thermal decomposition behaviors were found. These inevitably affected texture and microstructure of the sol-gel derived thin films, demonstrating the important role of precursor chemistry in the improvement of film properties. In the case of tantalum doped Pt/PZT/Pt ferroelectric capacitors a rectangular hysteresis loop, featuring high Pr, was obtained for one specific precursor chemistry.

Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

2015 ◽  
Vol 3 (3) ◽  
pp. 582-595 ◽  
Author(s):  
Qi Zhang ◽  
Nagarajan Valanoor ◽  
Owen Standard
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Critical Role ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.

Effects of bi2o3 buffer layer on ferroelectric properties of srbi2ta2o9 thin films by liquid-delivery mocvd

2001 ◽  
Vol 36 (1-4) ◽  
pp. 295-304
Author(s):  
Woong Chul Shin ◽  
Kyu Jeong Choi ◽  
Nak Jin Seong ◽  
Soon Gil Yoon
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ferroelectric Properties ◽  
Liquid Delivery
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