Improvement in ferroelectric properties of Pb(Zr0.35Ti0.65)O3 thin films using a Pb2Ru2O7−x conductive interfacial layer for ferroelectric random access memory application

2003 ◽  
Vol 83 (14) ◽  
pp. 2880-2882 ◽  
Author(s):  
Sung-Nam Ryoo ◽  
Soon-Gil Yoon ◽  
Seung-Hyun Kim
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Ferroelectric Properties ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Ferroelectric Random Access Memory

(1-x)SrBi2Ta2O9-xBi3Ti(TayNb1-y)O9 Layered Structure Solid Solutions for Ferroelectric Random Access Memory Devices

1997 ◽  
Vol 493 ◽  
Author(s):  
P. C. Joshi ◽  
S. O. Ryu ◽  
S. Tirumala ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Retention ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Memory Applications

ABSTRACTThin films of layered-structure solid-solution material, (1−x)SrBi2Ta2O9−xBi3Ti(TayNb1−y)O9, have shown much improved ferroelectric properties compared to SrBi2Ta2O9, a leading candidate material for ferroelectric random access memory applications. The higher Pr, higher Tc, and lower crystallization temperature of the thin films of solid solution material promise to solve many problems with the present materials of interest. The films were fabricated by metalorganic solution deposition technique using room temperature processed alkoxide-carboxylate precursor solution and characterized in terms of structural, dielectric, and ferroelectric properties. It was possible to obtain a pyrochlore free crystalline phase at an annealing temperature of 600 °C. The effects of annealing temperature and excess Bi content on the film microstructure and properties were analyzed. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors using Pt as the top and bottom electrode. It was possible to obtain good ferroelectric properties on films annealed at 650 °C. For example, thin films with 0.7SrBi2Ta2O9-0.3Bi3TiTaO9 composition, which were annealed at 650 °C, exhibited typical 2Pr and Ec values of 12.4 μC/cm2 and 80 kV/cm, respectively. The films exhibited low leakage current density, good fatigue characteristics under bipolar stressing at least up to 1010 switching cycles, and good memory retention characteristics after about 106 s of memory retention indicating a favorable behavior for memory applications.

Effect of Ta Nanobarrier in Magnetron Sputtering of Nd-Doped SrBi2Ta2O9 Thin Films

2008 ◽  
Vol 8 (5) ◽  
pp. 2618-2622
Author(s):  
Yibin Li ◽  
Sam Zhang ◽  
Thirumany Sritharan ◽  
Xiaomin Li ◽  
Yang Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Remnant Polarization ◽  
Ferroelectric Properties ◽  
Random Access ◽  
Random Access Memory ◽  
Layered Perovskite ◽  
Interfacial Diffusion ◽  
Access Memory ◽  
Memory Applications ◽  
Secondary Ion

SrBi2Ta2O9 (SBT) is a bismuth layered perovskite with attractive ferroelectric properties for random access memory applications. Our previous studies showed that Nd-doped SBT (SNBT) thin films exhibited an improved remnant polarization and reduced coercivity. This paper concentrates on the effect of Ta nanobarrier in between the SNBT and the Pt layers. Without the nanobarrier, severe bismuth diffusion is revealed by the secondary ion mass spectroscopy. However, with a nano layer (up to 2 nm) of Ta metal, the interfacial diffusion is effectively suppressed even at 800 °C. Details of the composition profiling, film crystallinity and remnant polarization are discussed in view of the nanobarrier thickness.

Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

2006 ◽  
Vol 100 (5) ◽  
pp. 051603 ◽  
Author(s):  
D. J. Wouters ◽  
D. Maes ◽  
L. Goux ◽  
J. G. Lisoni ◽  
V. Paraschiv ◽  
...  
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Ferroelectric Random Access Memory

PROPERTIES OF NEODYMIUM-DOPED Bi 4 Ti 3 O 12 THIN FILMS FOR FERROELECTRIC RANDOM ACCESS MEMORY

2006 ◽  
Vol 84 (1) ◽  
pp. 67-73 ◽  
Author(s):  
DAN XIE ◽  
ZHIGANG ZHANG ◽  
TIANLING REN ◽  
TIANZHI LIU ◽  
YAQI DONG ◽  
...  
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Ferroelectric Random Access Memory
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