scholarly journals Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015221
Author(s):  
Protyush Sahu ◽  
Jun-Yang Chen ◽  
Jian-Ping Wang
Keyword(s):  
Charge Trapping ◽  
Accumulation Mode ◽  
Gate Capacitance ◽  
Capacitance Characteristics

scholarly journals Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs

AIP Advances ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 015315 ◽  
Author(s):  
Protyush Sahu ◽  
Jun-Yang Chen ◽  
Jian-Ping Wang
Keyword(s):  
Charge Trapping ◽  
Accumulation Mode

Gate capacitance characteristics of a poly-Si thin film transistor

2004 ◽  
Vol 48 (5) ◽  
pp. 675-681 ◽  
Author(s):  
Simrata Bindra ◽  
Subhasis Haldar ◽  
R.S. Gupta
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Capacitance ◽  
Capacitance Characteristics ◽  
Si Thin Film

FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application

2015 ◽  
Vol 104 ◽  
pp. 116-121 ◽  
Author(s):  
Xing Wei ◽  
Jian Zhong ◽  
Jun Luo ◽  
Hao Wu ◽  
Huilong Zhu ◽  
...  
Keyword(s):  
Gate Capacitance ◽  
Substrate Layer ◽  
Capacitance Characteristics

scholarly journals Analysis of junction capacitance characteristics of trench gate IGBT

2021 ◽  
Vol 237 ◽  
pp. 02024
Author(s):  
Bo Wang
Keyword(s):  
Experimental Verification ◽  
Bipolar Transistor ◽  
Depletion Layer ◽  
Analysis Method ◽  
Junction Capacitance ◽  
Insulated Gate Bipolar Transistor ◽  
Gate Capacitance ◽  
Gate Structure ◽  
Conductive Channel ◽  
Capacitance Characteristics

Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance during switching transient, the influence of junction capacitance should be considered. The conductive channel of trench gate structure is different from that of planar gate structure, and the analysis method of junction capacitance using planar gate structure will inevitably bring some deviation. Based on the characteristics of trench gate structure, this paper analyzes the different expressions of internal gate-drain junction capacitance in two cases according to whether the base depletion layer can be widened to cover the trench gate, and finally carries out simulation and experimental verification.

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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