Measurement and simulation of floating substrate effects on the intrinsic gate capacitance characteristics of SOI n-MOSFETs

D. Flandre

doi:10.1049/el:19920614

Measurement and simulation of floating substrate effects on the intrinsic gate capacitance characteristics of SOI n-MOSFETs

Electronics Letters ◽

10.1049/el:19920614 ◽

1992 ◽

Vol 28 (10) ◽

pp. 967-969 ◽

Cited By ~ 6

Author(s):

D. Flandre

Keyword(s):

Substrate Effects ◽

Gate Capacitance ◽

Capacitance Characteristics

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Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics

AIP Advances ◽

10.1063/9.0000027 ◽

2021 ◽

Vol 11 (1) ◽

pp. 015221

Author(s):

Protyush Sahu ◽

Jun-Yang Chen ◽

Jian-Ping Wang

Keyword(s):

Charge Trapping ◽

Accumulation Mode ◽

Gate Capacitance ◽

Capacitance Characteristics

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Gate capacitance characteristics of a poly-Si thin film transistor

Solid-State Electronics ◽

10.1016/j.sse.2003.09.016 ◽

2004 ◽

Vol 48 (5) ◽

pp. 675-681 ◽

Cited By ~ 5

Author(s):

Simrata Bindra ◽

Subhasis Haldar ◽

R.S. Gupta

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Gate Capacitance ◽

Capacitance Characteristics ◽

Si Thin Film

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Gate capacitance characteristics of gate N/sup -/ overlap LDD transistor with high performance and high reliability

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235376 ◽

2002 ◽

Cited By ~ 3

Author(s):

M. Inuishi ◽

K. Mitsui ◽

S. Kusunoki ◽

H. Oda ◽

K. Tsukamoto ◽

...

Keyword(s):

High Performance ◽

High Reliability ◽

Gate Capacitance ◽

Capacitance Characteristics

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Gate-capacitance characteristics of deep-submicron LATID (large-angle-tilt implanted drain) MOSFETs

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235375 ◽

2002 ◽

Cited By ~ 3

Author(s):

T. Hori ◽

Y. Odake ◽

J. Hirase ◽

T. Yasui

Keyword(s):

Large Angle ◽

Deep Submicron ◽

Gate Capacitance ◽

Capacitance Characteristics

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FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application

Solid-State Electronics ◽

10.1016/j.sse.2014.10.011 ◽

2015 ◽

Vol 104 ◽

pp. 116-121 ◽

Cited By ~ 1

Author(s):

Xing Wei ◽

Jian Zhong ◽

Jun Luo ◽

Hao Wu ◽

Huilong Zhu ◽

...

Keyword(s):

Gate Capacitance ◽

Substrate Layer ◽

Capacitance Characteristics

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Investigation of the gate capacitance characteristics of short channel MOSFETs.

10.22215/etd/1989-01608 ◽

1989 ◽

Author(s):

Christos Karabatsos

Keyword(s):

Short Channel ◽

Gate Capacitance ◽

Capacitance Characteristics

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Analysis of floating substrate effects on the intrinsic gate capacitance of SOI MOSFETSs using two-dimensional device simulation

IEEE Transactions on Electron Devices ◽

10.1109/16.277335 ◽

1993 ◽

Vol 40 (10) ◽

pp. 1789-1796 ◽

Cited By ~ 19

Author(s):

D. Flandre

Keyword(s):

Device Simulation ◽

Two Dimensional ◽

Substrate Effects ◽

Gate Capacitance

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Analysis of junction capacitance characteristics of trench gate IGBT

E3S Web of Conferences ◽

10.1051/e3sconf/202123702024 ◽

2021 ◽

Vol 237 ◽

pp. 02024

Author(s):

Bo Wang

Keyword(s):

Experimental Verification ◽

Bipolar Transistor ◽

Depletion Layer ◽

Analysis Method ◽

Junction Capacitance ◽

Insulated Gate Bipolar Transistor ◽

Gate Capacitance ◽

Gate Structure ◽

Conductive Channel ◽

Capacitance Characteristics

Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance during switching transient, the influence of junction capacitance should be considered. The conductive channel of trench gate structure is different from that of planar gate structure, and the analysis method of junction capacitance using planar gate structure will inevitably bring some deviation. Based on the characteristics of trench gate structure, this paper analyzes the different expressions of internal gate-drain junction capacitance in two cases according to whether the base depletion layer can be widened to cover the trench gate, and finally carries out simulation and experimental verification.

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