Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl2∕Ar plasma
2004 ◽
Vol 22
(6)
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pp. 2336-2341
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2002 ◽
Vol 63
(4)
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pp. 353-361
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2005 ◽
Vol 34
(6)
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pp. 740-745
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2015 ◽
Vol 32
(5)
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pp. 058102
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