P-type InxGa1−xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-1019 cm−3 and device quality surface morphology

2021 ◽  
Vol 119 (12) ◽  
pp. 122101
Author(s):  
Evyn L. Routh ◽  
Mostafa Abdelhamid ◽  
Peter Colter ◽  
N. A. El-Masry ◽  
S. M. Bedair
Keyword(s):  
Surface Morphology ◽  
Room Temperature ◽  
Hole Concentration ◽  
P Type ◽  
Quality Surface

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

Electrochemical Deposition of (Bi,Sb)2Te3 for Thermoelectric Microdevices

2000 ◽  
Vol 626 ◽  
Author(s):  
Jean-Pierre Fleurial ◽  
Jennifer A. Herman ◽  
G. Jeffrey Snyder ◽  
Margaret A. Ryan ◽  
Alexander Borshchevsky ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Electrochemical Deposition ◽  
Smooth Surface ◽  
Room Temperature ◽  
Aqueous Electrolyte ◽  
Experimental Methods ◽  
Thick Photoresist ◽  
P Type ◽  
Nanoporous Templates ◽  
Deposited Films

ABSTRACTNew experimental methods have been developed to electrochemically deposit p-type Sb-rich Bi2-xSbxTe3, Pb-doped and Bi-doped Bi2Te3, and PbTe thick films. Some of the deposited films were dense and had a smooth surface morphology. These films were deposited potentiostatically at room temperature in an acidic aqueous electrolyte. Experimental deposition of Bi2Te3 alloys into various thick nanoporous templates made out of anodized alumina has also been achieved. Miniaturized thermoelements for microdevices (25 μm tall, 60 μm diameter) were grown by plating through thick photoresist templates. The experimental techniques developed, as well as the transport properties of some of the films and filled templates, will be presented.

Enhanced hole concentration and improved surface morphology for nonpolar a-plane p-type AlGaN/GaN superlattices grown with indium-surfactant

2019 ◽  
Vol 130 ◽  
pp. 396-400
Author(s):  
Aijie Fan ◽  
Xiong Zhang ◽  
Zili Wu ◽  
Jianguo Zhao ◽  
Shuai Chen ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Hole Concentration ◽  
P Type

Optical and EPR Study of Defects in Cadmium Germanium Arsenide

2002 ◽  
Vol 744 ◽  
Author(s):  
Lihua Bai ◽  
N. Y. Garces ◽  
Nanying Yang ◽  
P. G. Schunemann ◽  
S. D. Setzler ◽  
...  
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Room Temperature ◽  
Hole Concentration ◽  
Paramagnetic Defect ◽  
Paramagnetic Resonance ◽  
Anion Site ◽  
Shallow Acceptors ◽  
P Type ◽  
Cadmium Germanium Arsenide

ABSTRACTBulk crystals of CdGeAs2 have been characterized using photoluminescence (PL), optical absorption, Hall effect, and electron paramagnetic resonance (EPR) techniques. An absorption band near 5.5 microns at room temperature is observed in all of the p-type samples we have studied. A correlation between the magnitude of this optical absorption and the excess hole concentration at room temperature is established. Also, an EPR signal is found to correlate with the strength of this absorption band. PL data are consistent with an increased concentration of shallow acceptors being present in high-absorption samples. From the EPR data, we suggest that a model for the paramagnetic defect associated with the absorption at 5.5 microns may be an acceptor on an anion site.

The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Yixin Jin ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Long Wavelength ◽  
Measurement Results ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

2009 ◽  
Vol 1198 ◽  
Author(s):  
Neeraj Nepal ◽  
M. Oliver Luen ◽  
Pavel Frajtag ◽  
John Zavada ◽  
Salah M. Bedair ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Organic Chemical ◽  
Ferromagnetic Behavior ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
P Type ◽  
Organic Chemical Vapor Deposition

AbstractWe report on metal organic chemical vapor deposition growth of GaMnN/p-GaN/n-GaN multilayer structures and manipulation of room temperature (RT) ferromagnetism (FM) in a GaMnN layer. The GaMnN layer was grown on top of a n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (Ms) was observed. Ms was almost doubled after annealing demonstrating that the FM observed in GaMnN film is carrier-mediated. To control the hole concentration of the p-GaN layer by depletion, GaMnN/p-GaN/n-GaN multilayer structures of different p-GaN thickness (Xp) were grown on sapphire substrates. We have demonstrated that the FM depends on the Xp and the applied bias to the GaN p-n junction. The FM of these multilayer is independent on the top GaMnN layer thickness (tGaMnN) for tGaMnN >200 nm and decreases for tGaMnN < 200 nm. Thus the room temperature FM of GaMnN i-p-n structure can also be controlled by changing Xp and tGaMnN in the GaMnN i-p-n structures.

Surface Morphology of Seeded Nanostructured ZnO on Silicon by Sol-Gel Technique

2013 ◽  
Vol 667 ◽  
pp. 265-271 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
Azlinda Ab Aziz ◽  
Mohamad Rusop Mahmood ◽  
Saifollah Abdullah
Keyword(s):  
Surface Morphology ◽  
Room Temperature ◽  
Sol Gel ◽  
Electron Microscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis ◽  
Scanning Electron Microscopic ◽  
Gel Technique ◽  
P Type

Nanostructured ZnO as a seeded was prepared by sol-gel technique on p-type silicon in various low molarities. Zinc acetate, Diethanolamine (DEA), and isopropyl were use as starting material, stabilizer, and solvent respectively. Atomic Force Microscopy (AFM) analysis shows smooth surface and uniform layer were produced in low molarities of precursor. The surface morphology of nanostructured ZnO was analyzed by Field Emission Scanning Electron Microscopic (FESEM). It is found that the nanostructured ZnO were successfully deposited on the silicon substrate with size ~10 nm to ~35 nm. Photoluminescence spectroscopy was employed to study the band gap in room temperature. It shows that very low intensity of PL in 0.05m and 0.1 m. PL intensity become more obvious starting from 0.15 m of precursor concentration.

p-type in ZnO:N by codoping with Cr

2003 ◽  
Vol 786 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
J. Kossut ◽  
R. Butkute ◽  
W. Dobrowolski ◽  
...  
Keyword(s):  
Time Scale ◽  
Room Temperature ◽  
Surface Passivation ◽  
Hole Concentration ◽  
Rf Sputtering ◽  
Zno Films ◽  
Type Conductivity ◽  
Chromium Doping ◽  
P Type ◽  
Over Time

ABSTRACTWe report on the fabrication of p-ZnO films by thermal oxidation of Zn3N2 deposited by reactive rf sputtering. With additional chromium doping we achieved p-type conductivity with the hole concentration ∼5×1017cm−3 and the mobility of 23.6 cm2/Vs at room temperature. We developed a method of surface passivation of p-ZnO that maintains its p-type conductivity over time-scale of months.

Alx Ga1-x as Growth by OMVPE Using Trimethylamine Alane

1990 ◽  
Vol 204 ◽  
Author(s):  
W. S. Hobson ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
T. D. Harris
Keyword(s):  
Surface Morphology ◽  
Entire Range ◽  
Room Temperature ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Flow Rates ◽  
Room Temperature Photoluminescence ◽  
Compositional Uniformity ◽  
Trimethylamine Alane ◽  
Aluminum Precursor

ABSTRACTWe have investigated the growth of Alx Gal-xAs (0.1 ≤ x ≤ 1) by organometallic vapor phase epitaxy using trimethylamine alane (TMAA1) as the aluminum precursor. A low pressure (30 Torr) reactor was used with hydrogen as the carrier gas. At the high gas velocities (> 1 m · s-1) employed there was no visible deposition upstream of the substrate. AIGaAs epilayers with featureless surface morphology could be obtained over the entire range of composition. The layers exhibited very strong room-temperature photoluminescence and excellent compositional uniformity (x = 0.235 ± 0.002 over a 40 mm diameter). A comparison was made between the electrical and optical characteristics of AlGaAs grown with either trimethylgallium (TMGa) or triethylgallium (TEGa). The hole concentration of the layers grown using TMGa was significantly higher than that with TEGa (e.g., 6–7 × 1017 cm-3 vs. 1 × 1016 cm-3) for the same TMAA1 and AsH3 mole fractions. High-purity AlGaAs was achieved with TMAAl and TEGa at higher AsH3 flow rates.

Hydrogenation of Gallium Nitride

1993 ◽  
Vol 325 ◽  
Author(s):  
M. S. Brandt ◽  
N. M. Johnson ◽  
R. J. Molnar ◽  
R. Singh ◽  
T. D. Moustakas
Keyword(s):  
Comparative Study ◽  
Conduction Band ◽  
Room Temperature ◽  
Hole Concentration ◽  
Conduction Band Edge ◽  
Order Of Magnitude ◽  
Si Doped ◽  
Donor State ◽  
P Type ◽  
Mg Doped

AbstractA comparative study of the effects of hydrogen in n-type (unintentionally and Si-doped) as well as p-type (Mg-doped) MBE-grown GaN is presented. Hydrogenation above 500°C reduces the hole concentration at room temperature in the p-type material by one order of magnitude. Three different microscopic effects of hydrogen are suggested: Passivation of deep defects and of Mg-acceptors due to formation of hydrogen-related complexes and the introduction of a hydrogenrelated donor state 100 meV below the conduction band edge.

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