Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

2021 ◽  
Vol 119 (13) ◽  
pp. 133503
Author(s):  
Ruize Sun ◽  
Xinghuan Chen ◽  
Chao Liu ◽  
Wanjun Chen ◽  
Bo Zhang
Keyword(s):  
Neutron Irradiation ◽  
Degradation Mechanism ◽  
Power Devices ◽  
Gate Stack

The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices

2015 ◽  
Vol 821-823 ◽  
pp. 785-788 ◽  
Author(s):  
Pavel Hazdra ◽  
Stanislav Popelka ◽  
Vít Zahlava
Keyword(s):  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Nitrogen Doping ◽  
Deep Level ◽  
Removal Rate ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Deep Acceptor ◽  
Measurement Results ◽  
Transient Spectroscopy

Commercial 1200V and 1700V MPS diodes and 1700V vertical JFETs produced on 4H-SiC n-type epilayers were neutron irradiated with fluences up to 4x1014 cm-2 (1 MeV neutron equivalent Si). Radiation defects and their effect on carrier removal were investigated by capacitance deep-level transient spectroscopy, I-V and C-V measurement. Results show that neutron irradiation introduces different point defects giving rise to deep acceptor levels which compensate nitrogen doping of the epilayer. The carrier removal rate increases linearly with nitrogen doping. Introduced defects deteriorate ON-state characteristics of irradiated devices while their effect on blocking characteristics is negligible. The effect of neutron irradiation can be simulated by TCAD tools using a simple model accounting for introduction of one dominant deep level (Z1/Z2 centre).

scholarly journals Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs lifetime by Reliability Tests

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5627
Author(s):  
Fabio Principato ◽  
Giuseppe Allegra ◽  
Corrado Cappello ◽  
Olivier Crepel ◽  
Nicola Nicosia ◽  
...  
Keyword(s):  
High Temperature ◽  
Neutron Irradiation ◽  
Neutron Fluence ◽  
Electrical Characterization ◽  
Gate Oxide ◽  
Power Devices ◽  
Electrical Parameters ◽  
Power Mosfets ◽  
The Impact ◽  
Dc Characterization

High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were conducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence up to 2× 1011 (n/cm2). Electrical characterization performed pre and post-irradiation on different part number of power devices (Si, SiC MOSFETs and IGBTs) which survived to neutron irradiation tests does not show alteration of the data-sheet electrical parameters due to neutron interaction with the device.

scholarly journals Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

Energies ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 2170
Author(s):  
Surya Elangovan ◽  
Edward Yi Chang ◽  
Stone Cheng
Keyword(s):  
Degradation Mechanism ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage ◽  
Power Devices ◽  
Bias Stress ◽  
Electron Mobility Transistors ◽  
Before And After ◽  
State Resistance ◽  
Gate Region

In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (VGS) bias stress. Device transfer and transconductance, output, and gate-leakage characteristics were studied in detail, before and after each pulsed and prolonged negative VGS bias stress. We found that the gradual degradation of electrical parameters, such as threshold voltage (VTH) shift, on-state resistance (RDS-ON) increase, transconductance max (Gm, max) decrease, and gate leakage current (IGS-Leakage) increase, is caused by negative VGS bias stress time evolution and magnitude of stress voltage. The significance of electron trapping effects was revealed from the VTH shift or instability and other parameter degradation under different stress voltages. The degradation mechanism behind the DC characteristics could be assigned to the formation of hole deficiency at p-GaN region and trapping process at the p-GaN/AlGaN hetero-interface, which induces a change in the electric potential distribution at the gate region. The design and application of E-mode GaN with p-GaN gate power devices still need such a reliability investigation for significant credibility.

Voids in Irradiated Tungsten and Molybdenum

1969 ◽  
Vol 27 ◽  
pp. 190-191
Author(s):  
Robert C. Rau ◽  
Robert L. Ladd
Keyword(s):  
Melting Point ◽  
Fast Neutron ◽  
Neutron Irradiation ◽  
Elevated Temperatures ◽  
Irradiation Temperature ◽  
The Body ◽  
Face Centered Cubic ◽  
Body Centered Cubic ◽  
Cubic Metals ◽  
Face Centered

Recent studies have shown the presence of voids in several face-centered cubic metals after neutron irradiation at elevated temperatures. These voids were found when the irradiation temperature was above 0.3 Tm where Tm is the absolute melting point, and were ascribed to the agglomeration of lattice vacancies resulting from fast neutron generated displacement cascades. The present paper reports the existence of similar voids in the body-centered cubic metals tungsten and molybdenum.

Structures of c-di-GMP/cGAMP degrading phosphodiesterase VcEAL: identification of a novel conformational switch and its implication

2019 ◽  
Vol 476 (21) ◽  
pp. 3333-3353 ◽  
Author(s):  
Malti Yadav ◽  
Kamalendu Pal ◽  
Udayaditya Sen
Keyword(s):  
Active Site ◽  
Metal Binding ◽  
Metal Ion ◽  
Triosephosphate Isomerase ◽  
Catalytic Mechanism ◽  
Degradation Mechanism ◽  
Structural Basis ◽  
Conserved Residues ◽  
Phosphodiester Bond ◽  
Cyclic Dinucleotides

Cyclic dinucleotides (CDNs) have emerged as the central molecules that aid bacteria to adapt and thrive in changing environmental conditions. Therefore, tight regulation of intracellular CDN concentration by counteracting the action of dinucleotide cyclases and phosphodiesterases (PDEs) is critical. Here, we demonstrate that a putative stand-alone EAL domain PDE from Vibrio cholerae (VcEAL) is capable to degrade both the second messenger c-di-GMP and hybrid 3′3′-cyclic GMP–AMP (cGAMP). To unveil their degradation mechanism, we have determined high-resolution crystal structures of VcEAL with Ca2+, c-di-GMP-Ca2+, 5′-pGpG-Ca2+ and cGAMP-Ca2+, the latter provides the first structural basis of cGAMP hydrolysis. Structural studies reveal a typical triosephosphate isomerase barrel-fold with substrate c-di-GMP/cGAMP bound in an extended conformation. Highly conserved residues specifically bind the guanine base of c-di-GMP/cGAMP in the G2 site while the semi-conserved nature of residues at the G1 site could act as a specificity determinant. Two metal ions, co-ordinated with six stubbornly conserved residues and two non-bridging scissile phosphate oxygens of c-di-GMP/cGAMP, activate a water molecule for an in-line attack on the phosphodiester bond, supporting two-metal ion-based catalytic mechanism. PDE activity and biofilm assays of several prudently designed mutants collectively demonstrate that VcEAL active site is charge and size optimized. Intriguingly, in VcEAL-5′-pGpG-Ca2+ structure, β5–α5 loop adopts a novel conformation that along with conserved E131 creates a new metal-binding site. This novel conformation along with several subtle changes in the active site designate VcEAL-5′-pGpG-Ca2+ structure quite different from other 5′-pGpG bound structures reported earlier.

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