Effect of carbon, oxygen, and intrinsic defects on hydrogen-related donor concentration in proton irradiated n-type silicon

2021 ◽  
Vol 130 (11) ◽  
pp. 115704
Author(s):  
Akira Kiyoi ◽  
Naoyuki Kawabata ◽  
Katsumi Nakamura ◽  
Yasufumi Fujiwara
Keyword(s):  
Donor Concentration ◽  
Intrinsic Defects ◽  
Type Silicon ◽  
Related Donor

Annealing of Electron-Irradiatedn-Type Silicon. I. Donor Concentration Dependence

1971 ◽  
Vol 3 (2) ◽  
pp. 427-433 ◽  
Author(s):  
L. C. Kimerling ◽  
H. M. DeAngelis ◽  
C. P. Carnes
Keyword(s):  
Concentration Dependence ◽  
Donor Concentration ◽  
Type Silicon

Defect Reaction and Electrical Properties of Iron in N-Type Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Hajime Kitagawa ◽  
Shuji Tanaka
Keyword(s):  
Room Temperature ◽  
Isothermal Annealing ◽  
Consecutive Reaction ◽  
Type Silicon ◽  
Related Donor ◽  
And Diffusion ◽  
Donor Character ◽  
Annealing Experiments ◽  
Defect Reaction ◽  
Diffusion Properties

AbstractSince the first report by our group in 1992, iron-related defects in n-type silicon has been found to exhibit unusual in-diffusion and annealing properties. We review in this paper the recent progress in understanding the electrical and diffusion properties of iron-related defects in n-type silicon. We have shown from DLTS and Hall effect that iron in n-type silicon is electrically ionized and introduce one donor level at Ec-0.41 eV (level C) and, at least, one acceptor level at Ec-0.21 eV (level B). The donor character of former level has been confirmed by a Poole-Frenkel effect. The concentrations of two centers introduced are in the order of 1013 cm−3 at maxima. In-diffusion behavior of levels B and C show that these levels are intermediate states in a consecutive reaction of iron-related complex formation. Low-temperature isothermal annealing experiments from the room temperature to 200°C suggest that iron-related donor is formed, in part, by the electrostatic attractive force between two point charges.

Iron-Related Donor Level in N-Type Silicon

1995 ◽  
Vol 34 (Part 2, No. 6B) ◽  
pp. L721-L723 ◽  
Author(s):  
Shuji Tanaka ◽  
Hajime Kitagawa
Keyword(s):  
Donor Level ◽  
Type Silicon ◽  
Related Donor

The Nature of Intrinsic Defects in n-Type Silicon γ-Irradiated at 77 K

1986 ◽  
Vol 96 (2) ◽  
pp. K151-K155 ◽  
Author(s):  
V. P. Markevich ◽  
L. I. Murin
Keyword(s):  
Intrinsic Defects ◽  
Type Silicon

A Long Bar Type Silicon Resonator with a High Quality Factor

2014 ◽  
Vol 134 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Nguyen Van Toan ◽  
Masaya Toda ◽  
Yusuke Kawai ◽  
Takahito Ono
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Type Silicon ◽  
Silicon Resonator

Three-Dimensional Wiring Fabricating Process of Cantilever-type Silicon Probe for Semiconductor Testing

2015 ◽  
Vol 135 (8) ◽  
pp. 349-354
Author(s):  
Takanori Aono ◽  
Masatoshi Kanamaru ◽  
Ryuji Kohno ◽  
Atsushi Hosogane
Keyword(s):  
Three Dimensional ◽  
Type Silicon

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

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