Annealing of Electron-Irradiatedn-Type Silicon. I. Donor Concentration Dependence

1971 ◽  
Vol 3 (2) ◽  
pp. 427-433 ◽  
Author(s):  
L. C. Kimerling ◽  
H. M. DeAngelis ◽  
C. P. Carnes
Keyword(s):  
Concentration Dependence ◽  
Donor Concentration ◽  
Type Silicon

Donor Concentration Dependence of GaP Luminescence

1993 ◽  
Vol 117-118 ◽  
pp. 375-380 ◽  
Author(s):  
Teresa Monteiro ◽  
E. Pereira ◽  
F. Domingues-Adame ◽  
J. Piqueras
Keyword(s):  
Concentration Dependence ◽  
Donor Concentration

Concentration dependence of the hall factor in n-type silicon

1974 ◽  
Vol 23 (2) ◽  
pp. K123-K127 ◽  
Author(s):  
I. G. Kirnas ◽  
P. M. Kurilo ◽  
P. G. Litovchenko ◽  
V. S. Lutsyak ◽  
V. M. Nitsovich
Keyword(s):  
Concentration Dependence ◽  
Hall Factor ◽  
Type Silicon

Temperature and donor concentration dependence of the conduction electron Lande g-factor in silicon

2013 ◽  
Author(s):  
Anton A. Konakov ◽  
Alexander A. Ezhevskii ◽  
Andrey V. Soukhorukov ◽  
Davud V. Guseinov ◽  
Sergey A. Popkov ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Conduction Electron ◽  
Donor Concentration ◽  
G Factor

Effect of carbon, oxygen, and intrinsic defects on hydrogen-related donor concentration in proton irradiated n-type silicon

2021 ◽  
Vol 130 (11) ◽  
pp. 115704
Author(s):  
Akira Kiyoi ◽  
Naoyuki Kawabata ◽  
Katsumi Nakamura ◽  
Yasufumi Fujiwara
Keyword(s):  
Donor Concentration ◽  
Intrinsic Defects ◽  
Type Silicon ◽  
Related Donor
Sign in / Sign up

Export Citation Format

Share Document