Theory of Intrinsic Defects in Crystalline GeTe and of Their Role in Free Carrier Transport Novel Materials and Device Research

2008 ◽  
Author(s):  
Arthur H. Edwards
Keyword(s):  
Carrier Transport ◽  
Free Carrier ◽  
Intrinsic Defects ◽  
Novel Materials ◽  
Device Research

Novel Free-Carrier Pump-Probe Analysis of Carrier Transport in Semiconductors

2013 ◽  
Vol 3 (1) ◽  
pp. 348-352 ◽  
Author(s):  
R. K. Ahrenkiel ◽  
A. Feldman ◽  
J. Lehman ◽  
S. W. Johnston
Keyword(s):  
Carrier Transport ◽  
Free Carrier ◽  
Pump Probe ◽  
Probe Analysis

scholarly journals Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

2021 ◽  
Vol 61 (2) ◽  
Author(s):  
J.V. Vaitkus ◽  
A. Mekys ◽  
Š. Vaitekonis
Keyword(s):  
Neutron Irradiation ◽  
Electron Mobility ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Radiation Detector ◽  
Forward Bias ◽  
Free Carrier ◽  
Detector Efficiency ◽  
Applied Model ◽  
Carrier Scattering

An increase of neutron irradiation fluence caused a decrease of Si radiation detector efficiency that was exceptionally well seen at 1017 neutron/cm2 fluence when the observed I–V characteristic of p-n junction under forward bias and under reverse bias became similar. Therefore the investigation of free carrier mobility could be a key experiment to understand the change of heavily irradiated silicon. The electron mobility was investigated by magnetoresistance means in microstrip silicon samples at temperature range T = 200–276 K. The analysis included the free carrier scattering by phonons, ionized impurities, dipoles and clusters and a contribution of each process was found by fitting the mobility dependence on temperature. The analysis of experimental data clearly demonstrated that the applied model did not explain the mobility in the samples irradiated to the highest fluence. Therefore a new concept of carrier transport is needed, and, as a conclusion, it could be stated that Si irradiated above 1016 cm–2 fluence (and up to 1020 cm–2) is a disordered material with the clusters.

scholarly journals The nature of free-carrier transport in organometal halide perovskites

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Tomoya Hakamata ◽  
Kohei Shimamura ◽  
Fuyuki Shimojo ◽  
Rajiv K. Kalia ◽  
Aiichiro Nakano ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Free Carrier ◽  
Halide Perovskites

Influence of deep level intrinsic defects on the carrier transport in p-type Hg1-xCdxTe

1990 ◽  
Vol 101 (1-4) ◽  
pp. 854-858 ◽  
Author(s):  
W. Hoerstel ◽  
A. Klimakow ◽  
R. Kramer
Keyword(s):  
Carrier Transport ◽  
Deep Level ◽  
Intrinsic Defects ◽  
P Type

Charge Carrier Transport in a-Si:H/a-SiC:H Heterojunction with Blocking Layer

2001 ◽  
Vol 685 ◽  
Author(s):  
Yu. Vygranenko ◽  
M. Fernandes ◽  
P. Louro ◽  
A. Mačarico ◽  
M. Vieira
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Short Circuit ◽  
Free Carrier ◽  
Charge Carrier Transport ◽  
Blocking Layer ◽  
One Dimensional ◽  
Current Densities ◽  
Hole Current ◽  
Carrier Population

AbstractThis paper presents a one-dimensional numerical simulation of the charge carrier transport and photogeneration within a p-i-n (a-Si:H) homojunction and a p(a-SiC:H)/i (a-Si:H)/n (a-SiC:H) heterojunction with weakly-doped n-layers. A good matching between the simulated J-V characteristics and the corresponding experimental curves has been achieved for both configurations. By analysing the simulated band diagrams, electric fielddistributions, the electron and hole current densities, and the free carrier population profiles we conclude that in short-circuit mode the carrier transport is different in the homojunction and heterojunction due to band offsets.

scholarly journals Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO3thin films

2012 ◽  
Vol 85 (19) ◽  
Author(s):  
Elif Ertekin ◽  
Varadharajan Srinivasan ◽  
Jayakanth Ravichandran ◽  
Pim B. Rossen ◽  
Wolter Siemons ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
Intrinsic Defects
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