Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells

2010 ◽  
Vol 96 (19) ◽  
pp. 193501 ◽  
Author(s):  
Liang Fang ◽  
Seung Jae Baik ◽  
Koeng Su Lim ◽  
Seung Hyup Yoo ◽  
Myung Soo Seo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Tungsten Oxide ◽  
Buffer Layer ◽  
Silicon Based

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

scholarly journals A buffer-layer/a-SiOx:H(p) window-layer optimization for thin film amorphous silicon based solar cells

2013 ◽  
Vol 546 ◽  
pp. 331-336 ◽  
Author(s):  
Jinjoo Park ◽  
Vinh Ai Dao ◽  
Chonghoon Shin ◽  
Hyeongsik Park ◽  
Minbum Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Window Layer ◽  
Silicon Based

Improving Performance of Amorphous Silicon Solar Cells Using Tungsten Oxide as a Novel Buffer Layer between the SnO2/p-a-SiC Interface

2010 ◽  
Vol 1245 ◽  
Author(s):  
Liang Fang ◽  
Seung Jae Baik ◽  
Koseng Su Lim ◽  
Seung Hyup Yoo ◽  
Myung Soo Seo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Tungsten Oxide ◽  
Buffer Layer ◽  
Layer Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Si Solar Cells ◽  
Photovoltaic Characteristics

AbstractA thermally evaporated p-type amorphous tungsten oxide (p-a-WO3) film was introduced as a novel buffer layer between SnO2 and p-type amorphous silicon carbide (p-a-SiC) of pin-type amorphous silicon (a-Si) based solar cells. By using this film, a-Si solar cells with a p-a-WO3/p-a-SiC double p-layer structure were fabricated and the cell photovoltaic characteristics were investigated as a function of p-a-WO3 layer thickness. By inserting a 2 nm-thick p-a-WO3 layer between SnO2 and a 6 nm-thick p-a-SiC layer, the short circuit current density increased from 9.73 to 10.57 mA/cm2, and the conversion efficiency was enhanced from 5.17 % to 5.98 %.

High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer

2021 ◽  
Vol 118 (26) ◽  
pp. 263507
Author(s):  
Yanyun Ren ◽  
Xiaojing Fu ◽  
Zhi Yang ◽  
Ruoyao Sun ◽  
Ya Lin ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Memristive Device ◽  
Silicon Based

Production technology for amorphous silicon-based flexible solar cells

2001 ◽  
Vol 66 (1-4) ◽  
pp. 107-115 ◽  
Author(s):  
Yukimi Ichikawa ◽  
Takashi Yoshida ◽  
Toshio Hama ◽  
Hiroshi Sakai ◽  
Kouichi Harashima
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Production Technology ◽  
Silicon Based

Optimum band gap for amorphous silicon based solar cells

2002 ◽  
Author(s):  
P. Fiorini ◽  
A. Mittiga ◽  
I. Chambouleyron ◽  
F. Evangelisti
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Based
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